EMH59T2R

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The EMH59T2R is part of a unique family of pre-biased transistors known as bipolar junction transistors (BJT) arrays. The family provides the user with integrated protection features, including protection against output short circuits, over-current, and thermal shutdown.

The EMH59T2R can be configured as either a standard BJT array for discrete application designs, or as an integrated module with the on-chip resistors integrated into the package. The integrated module option provides a cost-effective solution for users who have limited board spac, while still providing excellent protection features.

The EMH59T2R is available in a variety of packages, including quad flat, SOIC, and surf-mount packages. The device is available in both 8-pin and 16-pin versions. The 8-pin version consists of four rows of two pins, while the 16-pin version is available in both dual-row and four-row configurations.

The EMH59T2R features multiple protection features, including overload, short-circuit, over-current, and thermal shutdown. The overload protection feature prevents the device from sustaining damage due to a severe overload, while the short-circuit protection feature prevents the device from experiencing a fault condition resulting from an output short. The over-current protection feature ensures that the output does not exceed the device’s rated current, while the thermal shutdown feature ensures that the device will not overheat due to prolonged exposure to high temperatures.

The EMH59T2R is designed to protect sensitive electronic components from damage due to voltage spike, current overload, and thermal exposure. Its built-in protection features make it an ideal choice for applications where reliable and consistent power delivery is essential, such as industrial control systems, automotive, and telecommunications.

The EMH59T2R\'s working principle is based on the concept of bipolar transistors, which are transistors that use both P-type and N-type semiconductor materials to create an electrically conducting channel between the two materials. When a voltage is applied to a transistor\'s base terminal, it creates a current flow between the two materials, either allowing or stopping current flow depending on the amount of voltage. When used in an array, the application voltage is spread across multiple transistors in order to maximize current output.

In the EMH59T2R array, the voltage is spread across the four transistors, each with its own set of protection features. The array is pre-biased, meaning that the transistors have been biased so that they are operating at the same base voltage. This eliminates the need to adjust the individual voltages for each transistor. The pre-biased array also eliminates the need for a voltage divider, which reduces cost and complexity.

The EMH59T2R array is designed for applications such as industrial control systems, automotive, and telecommunications, where reliability, uniform power delivery, and protection features are essential. It is an ideal solution for applications that require high- current outputs and dependable protection features.

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