Allicdata Part #: | EMH75T2RTR-ND |
Manufacturer Part#: |
EMH75T2R |
Price: | $ 0.05 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | TRANS 2NPN PREBIAS 0.15W EMT6 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Bi... |
DataSheet: | EMH75T2R Datasheet/PDF |
Quantity: | 1000 |
8000 +: | $ 0.04239 |
16000 +: | $ 0.03768 |
24000 +: | $ 0.03532 |
56000 +: | $ 0.03140 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 4.7 kOhms |
Resistor - Emitter Base (R2): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 150mV @ 500µA, 5mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | 250MHz |
Power - Max: | 150mW |
Mounting Type: | Surface Mount |
Package / Case: | SOT-563, SOT-666 |
Supplier Device Package: | EMT6 |
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The EMH75T2R is a pre-biased array of Bipolar Junction Transistors (BJT) which offers a number of advantages over other types of BJT arrays such as FETs and MOSFETS. It is widely used in Industrial, Automotive, Aerospace, and Military applications. It is a robust and reliable device, and offers excellent thermal performance.
The EMH75T2R is a three-legged structure containing a base, collector, and emitter. The 3N2R version is an NPN type of device while the 3P2R version is a PNP type. The device features a pre-biased structure, which means that the three legs are already pre-biased with a fixed voltage. This allows for more precise current flow, greater efficiencies, and improved thermal dissipation.
The device is designed to provide high-speed transistors with high power capability and excellent thermal performance, while maintaining a low on-resistance and low power consumption. This makes it ideal for applications such as power management, solid state relays, switching power supplies, circuit protection, and high-speed switching circuits.
The EMH75T2R is also designed with a high reliability and robustness to ensure its suitability for harsh environments. It is equipped with a reverse-connect protection, which prevents permanent damage should the collector-emitter voltage reach a certain level. This feature also ensures that the device does not get damaged during hot-swapping or on-off cycling.
The working principle of the EMH75T2R is based on the transfer of electrons from the base to the collector terminal. When a current is applied to the base, electrons are able to tunnel through the base-collector junction and gather at the collector terminal. This results in a current flow from the collector back to the emitter and is known as the collector current. This current flow can be controlled by adjusting the base current, and thus the device can be used to switch and amplify signals.
The EMH75T2R is a great choice for any application requiring high-speed, reliable transistors with excellent thermal properties and low power consumption. Its impressive features and robust structure make it ideal for a wide range of applications in the industrial, automotive, aerospace, and military sectors.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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EMH75T2R | ROHM Semicon... | 0.05 $ | 1000 | TRANS 2NPN PREBIAS 0.15W ... |
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