EMH9FHAT2R Allicdata Electronics

EMH9FHAT2R Discrete Semiconductor Products

Allicdata Part #:

EMH9FHAT2RTR-ND

Manufacturer Part#:

EMH9FHAT2R

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: NPN+NPN DIGITAL TRANSISTOR (CORR
More Detail: Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Bi...
DataSheet: EMH9FHAT2R datasheetEMH9FHAT2R Datasheet/PDF
Quantity: 8000
8000 +: $ 0.03572
Stock 8000Can Ship Immediately
$ 0.04
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): --
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): --
Frequency - Transition: 250MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: EMT6
Description

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Bipolar Junction Transistors (BJTs) are transistors primarily used for switching, amplifying, and controlling electrical signals. The EMH9FHAT2R is a pre-biased array of BJTs that offers improved performance and reliability over traditional solutions. In this article, we will discuss the application fields and working principles of the EMH9FHAT2R.

Application Fields

The EMH9FHAT2R can be used in a wide range of applications, from medical and commercial electronic equipment to aerospace and electro-mechanical devices. It is especially suitable for applications in which reliable, fast switching, low power, and low noise levels are required. For example, the EMH9FHAT2R can be used for signal conditioning, signal amplification, power management, and power sequencing in medical, automotive, robotic, and aerospace systems.

Working Principle

At the heart of the EMH9FHAT2R is a pre-biased array of BJTs that enables it to switch quickly and accurately without the need for external bias control. This array consists of three BJTs connected in series, with each BJT biased so that a small current is always flowing through it. This small current helps to ensure that the transistor will be biased properly under all operating conditions. The pre-biased array also helps to improve the speed of the switching process since the voltage drop across each BJT is minimized, resulting in faster response times. This makes the EMH9FHAT2R particularly suitable for applications where fast switching is required.

The EMH9FHAT2R also has two output transistors, with one of them connected to the base of each BJT. This helps to improve the efficiency of the switching process since the output transistors can provide more control over the current flow through the BJTs. The output transistors also reduce the amount of power that is dissipated from the transistors, resulting in improved reliability and efficiency.

The EMH9FHAT2R also offers a selectable current limiting feature, which helps to prevent the transistors from being overloaded. This prevents damage to the BJTs and helps to ensure that they remain in good condition even when they are facing high voltages and currents. The selectable current limiting protects the transistors from being damaged.

In addition, the EMH9FHAT2R has a built-in reference voltage to ensure accuracy and consistency in its operations. The reference voltage helps to keep the current flow through the BJTs constant, which in turn helps to improve the stability and accuracy of the system. This is important for applications where high accuracy is required.

Overall, the EMH9FHAT2R is an ideal solution for applications where reliable and fast switching, low power and low noise levels are required. Its pre-biased array of BJTs and built-in reference voltage make it an excellent choice for applications in the automotive, robotic, and aerospace industries.

The specific data is subject to PDF, and the above content is for reference

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