EMX26T2R Discrete Semiconductor Products |
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Allicdata Part #: | EMX26T2RTR-ND |
Manufacturer Part#: |
EMX26T2R |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | TRANS 2NPN 50V 0.15A 6EMT |
More Detail: | Bipolar (BJT) Transistor Array 2 NPN (Dual) 50V 15... |
DataSheet: | EMX26T2R Datasheet/PDF |
Quantity: | 16000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | 2 NPN (Dual) |
Current - Collector (Ic) (Max): | 150mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 5mA, 50mA |
Current - Collector Cutoff (Max): | 300nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 820 @ 50mA, 5V |
Power - Max: | 150mW |
Frequency - Transition: | 250MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SOT-563, SOT-666 |
Supplier Device Package: | EMT6 |
Base Part Number: | *MX26 |
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The EMX26T2R is an integrated array of 26 field-effect transistors fabricated in a single package or silicon die. It is one of the most advanced integrated transistors available in todays market due to its superior performance and low power consumption. Unlike discrete transistors, the integrated circuitry of the EMX26T2R allows for higher integration and lower device cost. This makes the device suitable for a broad range of applications, ranging from power, data, and audio applications.
The EMX26T2R is a bipolar transistor, which means that it manages the flow of current in two basic directions, thereby providing two operating states, ON and OFF. This feature makes the device ideal for switching and amplifying as it can be used to control circuits in both directions. When the base is in the ON state, the current flows from the collector to the emitter, and when the base is in the OFF state, the current does not flow and the device is in the cut-off state.
The EMX26T2R offers a number of benefits to developers, most notably its wide parametric range, which allows for flexibility in design. It has an extremely low noise level and an ultra-low power consumption at low frequencies. As such, its low power capabilities make it the perfect solution for applications such as high-current amplifiers, signal processing, and embedded systems. Additionally, it has excellent linearity and high frequency response, which makes it suitable for audio applications.
The EMX26T2R features a low input capacitance, which allows for a small package size, a low input current, and a large temperature range. This makes the device highly reliable due to its extended lifetime and improved power dissipation. While it is not suitable for high power applications, it is highly suitable for low power applications due to its small size, low thermal resistance, and high current gain.
The EMX26T2R is an array design, which means that it is composed of individual transistors that are connected together in a grid. This feature allows for more efficient signal flow and faster switching as each of the individual transistors can be used to drive one or more of the address lines. The EMX26T2R can be configured for different applications such as logic, data storage, and digital signal processing.
In conclusion, the EMX26T2R is an integrated array of field-effect transistors that is suitable for a variety of low power applications. Its wide parametric range and low power consumption make it ideal for audio and signal processing applications, while its array design and low input capacitance makes it suitable for logic, data storage, and digital signal processing applications.
The specific data is subject to PDF, and the above content is for reference
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