Allicdata Part #: | EMX2T2RTR-ND |
Manufacturer Part#: |
EMX2T2R |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | TRANS 2NPN 50V 0.15A 6EMT |
More Detail: | Bipolar (BJT) Transistor Array 2 NPN (Dual) 50V 15... |
DataSheet: | EMX2T2R Datasheet/PDF |
Quantity: | 144000 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Not For New Designs |
Transistor Type: | 2 NPN (Dual) |
Current - Collector (Ic) (Max): | 150mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 400mV @ 5mA, 50mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 1mA, 6V |
Power - Max: | 150mW |
Frequency - Transition: | 180MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SOT-563, SOT-666 |
Supplier Device Package: | EMT6 |
Base Part Number: | *MX2 |
Description
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EMX2T2R Arrays, or Enhanced Multi-Extension Transistor to Transistor Resistor Arrays, are a type of bipolar junction transistor (BJT) manufactured by Freescale Semiconductor. They are designed to enhance the efficiency, flexibility and scalability of electrical signals for analog circuit applications. The EMX2T2R is a two-transistor and two-resistor array which can be used to develop many types of analog circuit functions. The EMX2T2R is generally used for various linear, non-linear and bipolar junction transistor (BJT) circuit applications, from power amplifiers to high-speed switching to enhanced gain stages. The EMX2T2R has many advantages over traditional transistor arrays, such as lower cost, better efficiency, better flexibility, and lower power dissipation. The EMX2T2R is also better suited for applications requiring complex circuit functions and high-speed switching.The EMX2T2R technology is based on a pair of bipolar junction transistors, one of which is a PNP type and the other an NPN type, connected in series through a resistance network. The PNP and NPN transistors work together to create an amplified signal which can then be used to create various linear, non-linear and bipolar junction transistor (BJT) circuit functions. The EMX2T2R technology provides a number of advantages over traditional transistor arrays, such as lower cost, smaller size, better efficiency and better flexibility.The EMX2T2R also has a number of features that make it ideal for use in high-speed switching applications. It is designed to provide optimal current gain and low drive losses. The EMX2T2R also has built-in logic protection to ensure the correct signals are sent to the correct parts of the circuit. This helps to minimize redundant circuitry and reduce power consumption.The EMX2T2R also offers enhanced scalability. The EMX2T2R technology can be tailored to meet custom circuit functions, allowing designers to realize their full potential in applications requiring tight control of electrical signals. This scalability is also useful for optimizing designs which have to cope with constantly changing conditions.The EMX2T2R is ideal for applications which require wide or narrow bandwidths, highest accuracy, or high speed. In addition, its small form factor makes it suitable for use in SMDs (Surface Mount Devices) as well as traditional packages. This flexibility makes the EMX2T2R a highly sought after type of transistor array. The EMX2T2R has a wide variety of applications, from power amplifiers to high-speed switching to enhanced gain stages. It is an ideal choice for applications which require the amplification or conversion of electrical signals. The EMX2T2R also has enhanced scalability and versatility, which make it the perfect choice for custom circuit functions. The EMX2T2R is an excellent choice for applications requiring low-cost and high performance solutions.
The specific data is subject to PDF, and the above content is for reference
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