
Allicdata Part #: | ES2CR5GTR-ND |
Manufacturer Part#: |
ES2C R5G |
Price: | $ 0.10 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE GEN PURP 150V 2A DO214AA |
More Detail: | Diode Standard 150V 2A Surface Mount DO-214AA (SMB... |
DataSheet: | ![]() |
Quantity: | 850 |
850 +: | $ 0.08557 |
1700 +: | $ 0.07779 |
2550 +: | $ 0.07001 |
5950 +: | $ 0.06612 |
21250 +: | $ 0.06029 |
42500 +: | $ 0.05640 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 150V |
Current - Average Rectified (Io): | 2A |
Voltage - Forward (Vf) (Max) @ If: | 950mV @ 2A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 35ns |
Current - Reverse Leakage @ Vr: | 10µA @ 150V |
Capacitance @ Vr, F: | 25pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AA, SMB |
Supplier Device Package: | DO-214AA (SMB) |
Operating Temperature - Junction: | -55°C ~ 150°C |
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Diodes are essential components in the manufacture of electronic devices, and a variety of diode types are available for various applications. One such type of diode is an ES2C R5G, which is a high-power rectifier. This type of diode is commonly used in high-reliability and high-temperature applications, as well as in applications requiring low-noise rectification.
The ES2C R5G is a single-die rectifier with a dual anode structure, which gives it the ability to handle large currents. This makes it an ideal choice for applications where high power or fast recovery is needed. The rectification efficiency of the ES2C R5G is also very high, making it an excellent choice for applications requiring low-noise rectification.
The ES2C R5G can be used in applications where fast switching is required, such as in switching power supplies and DC-DC converters. It is also used in power rectification and acoustic signal applications, as well as in medical, military, and aerospace applications.
The working principle of the ES2C R5G is based on its dual anode structure. The two anode plates are arranged in an opposing configuration, providing the diode with a forward current-voltage characteristic. When a forward current passes through the diode, the voltage across the anodes is limited and thereby prevents any further current from flowing. The rectification occurs as a result of this voltage limitation. In addition, when the applied forward current is less than the conduction current limit of the diode, it will block any reverse current from passing through.
The ES2C R5G also has a high-temperature rating, making it suitable for use in higher-temperature applications. The diode is also capable of withstanding higher surge currents, which is beneficial in many applications. Additionally, the diode is well suited for high-frequency applications due to its high-frequency response.
In conclusion, the ES2C R5G is a high-power rectifier with a dual anode structure, making it suitable for a wide range of applications. Its forward current-voltage characteristic limits the voltage across its anodes, providing rectification, while its high-temperature rating makes it suitable for use in higher-temperature applications. Therefore, the ES2C R5G is a highly reliable, low-noise and high-efficiency rectifier that can be found in a variety of applications.
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