ESDLC5V0PB8-TP Allicdata Electronics

ESDLC5V0PB8-TP Circuit Protection

Allicdata Part #:

ESDLC5V0PB8-TPMSTR-ND

Manufacturer Part#:

ESDLC5V0PB8-TP

Price: $ 0.15
Product Category:

Circuit Protection

Manufacturer: Micro Commercial Co
Short Description: TVS DIODE 5V 20V DFN3810-9
More Detail: N/A
DataSheet: ESDLC5V0PB8-TP datasheetESDLC5V0PB8-TP Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
3000 +: $ 0.13124
6000 +: $ 0.12277
15000 +: $ 0.11431
Stock 1000Can Ship Immediately
$ 0.15
Specifications
Voltage - Clamping (Max) @ Ipp: 20V
Supplier Device Package: DFN3810-9
Package / Case: 9-UDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Frequency: 0.29pF @ 1MHz
Applications: General Purpose
Power Line Protection: Yes
Power - Peak Pulse: 100W
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Series: --
Voltage - Breakdown (Min): 6V
Voltage - Reverse Standoff (Typ): 5V (Max)
Unidirectional Channels: 9
Type: Steering (Rail to Rail)
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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TVS(Transient Voltage Suppression) Diode is widely used in electronic circuit to protect the various system from the damage of surge current, commonly referred to as transient voltage, such as lightning, static electricity, and so on. The ESDLC5V0PB8-TP is a TVS diode used for overvoltage protection. It is a unipolar application diode designed to protect against the electrostatic discharge (ESD) and other surge current.

The ESDLC5V0PB8-TP mainly consists of a bismuth oxide layer and an amorphous silicon layer. Due to the self-induced electric field effect, the bismuth oxide layer has the characteristics of controlling the energy of electric field and electric current generated by heavy ions accompanying the current. At the same time, the amorphous silicon layer enables the ESD circuit to maintain a comparatively low leakage current, low capacitance and low impedance.

In particular, the ESDLC5V0PB8-TP has a working voltage of 5volts, a greater working current up to 400mA, and also boasts a higher energy absorption capability. It can effectively absorb considerable current and dissipate energy, and can also provide reasonably long holding time.

With an improved structure, the ESDLC5V0PB8-TP can work rather quickly and accurately. It is applied to ESD protection for USB interface, I/O port, Video/Audio port, etc. As a stand-alone device, it is able to prevent secondary breakdown during a short-term over-voltage peak due to the internal unipolar structure.

The working principle of the ESDLC5V0PB8-TP is as follows: When a surge voltage induced by ESD or other transient voltage occurs, the avalanche breakdown of the diode will occur, producing an avalanche breakdown voltage and a certain current passing through it. The working current of the diode passes through the internal resistance and is divided into two parts, i.e., the dynamic part and the static part. The dynamic part is caused by the breakdown pulse, while the static part is the leakage current caused by the reverse breakdown. As the voltage decreases as the surge decays, the breakdown current also decreases correspondingly. When the applied voltage reaches zero or within the hold voltage range, the conduction state in forward direction ends and the ESDLC5V0PB8-TP acts to suppress the over-voltage.

In conclusion, the ESDLC5V0PB8-TP is a widely used TVS diode with many advantages like low capacitance, fast response time, and high pulse current. It is suitable for I/O port, USB interface, Video/Audio port, ESD protection and other applications. With the improved structure and excellent performance, the ESDLC5V0PB8-TP offers reliable protection and effectively reduces the simultaneous damage of system caused by surges.

The specific data is subject to PDF, and the above content is for reference

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