
Allicdata Part #: | ESH1B-M3/5AT-ND |
Manufacturer Part#: |
ESH1B-M3/5AT |
Price: | $ 0.10 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 100V 1A DO214AC |
More Detail: | Diode Standard 100V 1A Surface Mount DO-214AC (SMA... |
DataSheet: | ![]() |
Quantity: | 1000 |
15000 +: | $ 0.08930 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 100V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 900mV @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 25ns |
Current - Reverse Leakage @ Vr: | 1µA @ 100V |
Capacitance @ Vr, F: | 25pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AC, SMA |
Supplier Device Package: | DO-214AC (SMA) |
Operating Temperature - Junction: | -55°C ~ 175°C |
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Diodes are essential components in the electrical and electronics circuity. They are basically two terminals electrical components wherein the current flowing from one terminal to the other can be controlled and the voltage across them can be changed. Diodes, often referred to as rectifier diodes, are used for wave rectification and for changing AC signals into a DC signal. The ESH1B-M3/5AT diode is one such diode used for this purpose.
The ESH1B-M3/5AT is a single rectifier diode. It is available in a conventional leaded package, but is also available in a surface mount package to suit modern PCB technology. It has a forward current rating of 0.5 amperes and a reverse current rating of 50 volts. The ESH1B-M3/5AT diode can be used in various applications requiring high power efficiency due to its low forward voltage drop. It can be used as a voltage doubler and in DC-DC converters.
The working principle of a diode is based on the fact that current flows through a diode only in one direction. A diode, when exposed to voltage, allows current to flow through in one direction and not the other. This can be seen in an ideal diode which behaves as a perfect resistor and does not allow current to flow from the negative to the positive terminal. This ability of a diode to control the flow of current is essential in the field of electrical engineering and its applications.
In the case of the ESH1B-M3/5AT diode, the operating principle is similar to that of other diodes. The diode is designed to allow current to flow from one terminal to the other when exposed to a positive voltage. If a negative voltage is applied, the diode will not allow the current to pass. The ESH1B-M3/5AT diode has a low forward voltage drop, making it ideal for use in applications requiring high power efficiency. The low reverse current rating also makes it suitable for use in applications requiring protection from reverse current such as in a power supply.
The ESH1B-M3/5AT diode can be used in a wide range of applications. It can be used as a voltage doubler to produce a large AC signal from a small AC signal, or used in DC-DC converters to convert AC voltage to DC voltage. In addition, it can be used in automotive and telecommunications applications, where it can be used for rectifying AC signals. In the field of electronics, the diode is often used as a polarity protection element to protect sensitive equipment from current flow in the wrong direction.
The ESH1B-M3/5AT diode is a versatile component, with a wide range of applications. Its low forward voltage drop and low reverse current rating make it ideal for use in applications requiring high power efficiency, protection from current flow in the wrong direction, or rectification of an AC signal. This makes it a popular choice in the field of electrical engineering, where its many applications often prove to be an invaluable asset.
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ESH1C R3G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 150V 1A DO... |
ESH1B-E3/5AT | Vishay Semic... | 0.1 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
ESH1D-E3/61T | Vishay Semic... | -- | 1000 | DIODE GEN PURP 200V 1A DO... |
ESH1PAHE3/85A | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
ESH1PCHM3/84A | Vishay Semic... | 0.12 $ | 1000 | DIODE GEN PURP 150V 1A DO... |
ESH1PB-M3/85A | Vishay Semic... | 0.1 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
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ESH1DHE3/5AT | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
ESH1B M2G | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
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ESH108M016AH4AA | KEMET | 0.06 $ | 1000 | CAP ALUM 1000UF 20% 16V R... |
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ESH1B-M3/5AT | Vishay Semic... | 0.1 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
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