
Allicdata Part #: | ESH1DR3G-ND |
Manufacturer Part#: |
ESH1D R3G |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE GEN PURP 200V 1A DO214AC |
More Detail: | Diode Standard 200V 1A Surface Mount DO-214AC (SMA... |
DataSheet: | ![]() |
Quantity: | 1000 |
7200 +: | $ 0.04870 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 200V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 900mV @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 15ns |
Current - Reverse Leakage @ Vr: | 1µA @ 200V |
Capacitance @ Vr, F: | 16pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AC, SMA |
Supplier Device Package: | DO-214AC (SMA) |
Operating Temperature - Junction: | -55°C ~ 175°C |
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The EHS1D R3G is a diode rectifier single device. It is a three-terminal device which consists of a metal semiconductor material formed in a planar construction. EHS1D R3G devices are widely used in low voltage power supplies, rectification, and general-purpose rectifying applications. In addition, the device can also be used in the switching and reconfiguration of analog and digital circuits including those which require high switching speeds. In general, the EHS1D R3G is designed to be robust, reliable, and highly accurate.
A schematic representation of the EHS1D R3G device is shown in Figure 1. This device consists of a base, anode and cathode connection. The base consists of two layers of metal and an insulator material which separate the anode and cathode. The anode and cathode are both connected to the base and share the same conductive material. When the device is forward biased, the anode has a positive voltage relative to the cathode and current flows from the anode to the cathode. When the device is reverse biased, the voltage difference between the anode and cathode is negative, and no current flows.
The EHS1D R3G device has several advantages compared to other rectifying devices. First, the device is highly reliable since it is made with a robust construction. Second, the device is capable of operating at high temperatures due to its high thermal resistance. Third, the device has a wide range of power handling capabilities, as it can handle power up to 30A. Finally, the device has a high amount of forward surge capability, up to 150A.
The EHS1D R3G device is used in a wide range of applications, such as:
- AC/DC converters
- Switchmode power supplies
- Battery charging
- Reverse battery protection
- General-purpose rectification
- High-speed switching
- Switching and reconfiguration of analog and digital circuits
In AC/DC converters, the EHS1D R3G device is used to convert AC mains voltage to a low voltage DC supply. The device can also be used in switchmode power supplies to convert a low-voltage DC signal to a higher voltage, with the advantage of power saving. It is also commonly used in battery charging applications to regulate the charge and discharge of battery cells, and in reverse battery protection systems to protect the entire circuit from shorted connections. The device is also suitable for general-purpose rectification, high-speed switching and for switching and reconfiguring analog and digital circuits.
The working principle of the EHS1D R3G device is quite simple. When it is forward biased, current flows from the anode to the cathode and the device is conducting. This current flow causes a voltage drop across the device which is a function of the current and resistance. Similarly, when the device is reverse biased, no current flows, but there is a voltage difference between the anode and the cathode. The voltage difference is a function of the reverse bias voltage and the leakage current.
In conclusion, the EHS1D R3G is a highly reliable and robust device which is suitable for a wide range of applications including AC/DC converters, switchmode power supplies, reverse battery protection, general-purpose rectification, high-speed switching and reconfiguration of analog and digital circuits. The device is easy to use, with a simple working principle that makes it highly efficient.
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ESH1C R3G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 150V 1A DO... |
ESH1B-E3/5AT | Vishay Semic... | 0.1 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
ESH1D-E3/61T | Vishay Semic... | -- | 1000 | DIODE GEN PURP 200V 1A DO... |
ESH1PAHE3/85A | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
ESH1PCHM3/84A | Vishay Semic... | 0.12 $ | 1000 | DIODE GEN PURP 150V 1A DO... |
ESH1PB-M3/85A | Vishay Semic... | 0.1 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
ESH1PA-M3/84A | Vishay Semic... | 0.12 $ | 1000 | DIODE GEN PURP 50V 1A DO2... |
ESH1PDHE3/84A | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
ESH1PC-M3/85A | Vishay Semic... | 0.1 $ | 1000 | DIODE GEN PURP 150V 1A DO... |
ESH1DHE3/5AT | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
ESH1B M2G | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
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ESH108M016AH4AA | KEMET | 0.06 $ | 1000 | CAP ALUM 1000UF 20% 16V R... |
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