
Allicdata Part #: | ESH3BHE3/57T-ND |
Manufacturer Part#: |
ESH3BHE3/57T |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 100V 3A DO214AB |
More Detail: | Diode Standard 100V 3A Surface Mount DO-214AB (SMC... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 100V |
Current - Average Rectified (Io): | 3A |
Voltage - Forward (Vf) (Max) @ If: | 900mV @ 3A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 40ns |
Current - Reverse Leakage @ Vr: | 5µA @ 100V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AB, SMC |
Supplier Device Package: | DO-214AB (SMC) |
Operating Temperature - Junction: | -55°C ~ 175°C |
Base Part Number: | ESH3B |
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Diodes are one of the most fundamental components found in electronic circuits. Rectifiers are a type of diode used to convert alternating current (AC) power into direct current (DC) power. The ESH3BHE3/57T diode is a specialized, single-chip rectifier designed to provide reliable DC power in high-voltage and/or high-current applications.
The ESH3BHE3/57T rectifier has a wide voltage rating of up to 3,000 volts, making it well-suited for use in high-voltage applications such as lighting, high-voltage power supplies, and telecommunications systems. It also features a maximum operating temperature rating of 175°C, allowing it to operate reliably in high-temperature environments.
The rectifier employs an ultra-efficient SiC switching structure to minimize leakage current, input capacitance, and no-load power consumption. As a result, the ESH3BHE3/57T rectifier is able to provide a more stable output, improved power factor, and higher efficiency than traditional rectifiers.
In terms of its working principle, the ESH3BHE3/57T rectifier is designed to allow current to flow in one direction while blocking the flow of current in the opposite direction. This is accomplished by having the diode\'s p-n junction arranged in such a way that current can only flow in one direction, while any current attempting to flow in the opposite direction is blocked.
The rectifier also incorporates a resistive element to reduce voltage and power dissipation. Additionally, it is designed to ensure that the maximum forward voltage drop and recovery time are kept to a minimum.
Thanks to its exceptional performance and wide range of applications, the ESH3BHE3/57T rectifier has become a popular choice for designers who need a reliable and cost-effective solution for their DC power requirements.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
ESH337M050AH4AA | KEMET | 0.26 $ | 116 | CAP ALUM 330UF 20% 50V RA... |
ESH3DHE3_A/H | Vishay Semic... | 0.29 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
ESH3D-E3/57T | Vishay Semic... | -- | 1000 | DIODE GEN PURP 200V 3A DO... |
ESH3B-E3/57T | Vishay Semic... | -- | 1000 | DIODE GEN PURP 100V 3A DO... |
ESH3BHE3/9AT | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 100V 3A DO... |
ESH3D M6G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
ESH3C-E3/9AT | Vishay Semic... | -- | 1000 | DIODE GEN PURP 150V 3A DO... |
ESH337M025AG3AA | KEMET | 0.18 $ | 8579 | CAP ALUM 330UF 20% 25V RA... |
ESH3DHE3/9AT | Vishay Semic... | -- | 1000 | DIODE GEN PURP 200V 3A DO... |
ESH3D-M3/57T | Vishay Semic... | 0.16 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
ESH3CHE3_A/I | Vishay Semic... | 0.21 $ | 1000 | DIODE GEN PURP 150V 3A DO... |
ESH3B V7G | Taiwan Semic... | 0.1 $ | 1000 | DIODE GEN PURP 100V 3A DO... |
ESH3B-M3/57T | Vishay Semic... | 0.16 $ | 1000 | DIODE GEN PURP 100V 3A DO... |
ESH3B-E3/9AT | Vishay Semic... | -- | 1000 | DIODE GEN PURP 100V 3A DO... |
ESH3B R7G | Taiwan Semic... | 0.11 $ | 1000 | DIODE GEN PURP 100V 3A DO... |
ESH3C-E3/57T | Vishay Semic... | 0.21 $ | 1000 | DIODE GEN PURP 150V 3A DO... |
ESH3C V7G | Taiwan Semic... | 0.1 $ | 1000 | DIODE GEN PURP 150V 3A DO... |
ESH3B-M3/9AT | Vishay Semic... | 0.16 $ | 1000 | DIODE GEN PURP 100V 3A DO... |
ESH3D-M3/9AT | Vishay Semic... | 0.16 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
ESH337M035AH1AA | KEMET | 0.17 $ | 5571 | CAP ALUM 330UF 20% 35V RA... |
ESH3C M6G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 150V 3A DO... |
ESH3BHE3/57T | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 100V 3A DO... |
ESH3D V7G | Taiwan Semic... | 0.1 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
ESH3C-M3/57T | Vishay Semic... | 0.16 $ | 1000 | DIODE GEN PURP 150V 3A DO... |
ESH3C V6G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 150V 3A DO... |
ESH336M050AC3AA | KEMET | 0.12 $ | 8765 | CAP ALUM 33UF 20% 50V RAD... |
ESH336M035AC3AA | KEMET | 0.1 $ | 6191 | CAP ALUM 33UF 20% 35V RAD... |
ESH3D V6G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
ESH3B V6G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 100V 3A DO... |
ESH3C-M3/9AT | Vishay Semic... | 0.16 $ | 1000 | DIODE GEN PURP 150V 3A DO... |
ESH337M016AG3AA | KEMET | 0.16 $ | 11995 | CAP ALUM 330UF 20% 16V RA... |
ESH3CHE3_A/H | Vishay Semic... | 0.21 $ | 1000 | DIODE GEN PURP 150V 3A DO... |
ESH3DHE3/57T | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
ESH3D R7G | Taiwan Semic... | 0.11 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
ESH3C R7G | Taiwan Semic... | 0.11 $ | 1000 | DIODE GEN PURP 150V 3A DO... |
ESH3CHE3/57T | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 150V 3A DO... |
ESH3B M6G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 100V 3A DO... |
ESH3D-E3/9AT | Vishay Semic... | -- | 1000 | DIODE GEN PURP 200V 3A DO... |
ESH338M010AL3AA | KEMET | 0.35 $ | 804 | CAP ALUM 3300UF 20% 10V R... |
ESH3DHE3_A/I | Vishay Semic... | -- | 1000 | DIODE GEN PURP 200V 3A DO... |
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