
Allicdata Part #: | ESH3CHE3/57T-ND |
Manufacturer Part#: |
ESH3CHE3/57T |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 150V 3A DO214AB |
More Detail: | Diode Standard 150V 3A Surface Mount DO-214AB (SMC... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 150V |
Current - Average Rectified (Io): | 3A |
Voltage - Forward (Vf) (Max) @ If: | 900mV @ 3A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 40ns |
Current - Reverse Leakage @ Vr: | 5µA @ 150V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AB, SMC |
Supplier Device Package: | DO-214AB (SMC) |
Operating Temperature - Junction: | -55°C ~ 175°C |
Base Part Number: | ESH3C |
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The ESH3CHE3/57T is part of a family of reliable high power diodes, which includes the popular TT57. This model is one of a range of rectifier diodes that is used in a wide range of applications. This article aims to provide an overview of the ESH3CHE3/57T diode and to outline its application field and working principle.
Overview
The ESH3CHE3/57T is a high-speed, high-efficiency rectifier diode. It incorporates a reliable semiconductor device with a low forward voltage drop and high current carrying capability. The diode is designed for both rectification and signal switching applications. The ESH3CHE3/57T is available in single, double, triple and quad configurations, with the single device being the most commonly used. The device is housed in the industry standard TO-220 package, making it easy to integrate into a variety of devices.
Application Field
The ESH3CHE3/57T is designed to be used as a switching and rectification device. The diode is typically used in power supply devices, such as uninterrupted power supply systems and DC/DC converters. It is also found in telecommunications and wireless equipment, motor control systems, motor drivers, inverters and many power-related applications. The device is easy to integrate into a wide range of systems due to its high reliability and the industry-standard TO-220 package.
Working Principle
The ESH3CHE3/57T is a high-efficiency rectifying diode. It consists of a p-type semiconductor region at the anode and n-type semiconductor region at the cathode. When a voltage is applied, electrons flow from the anode to the cathode and holes flow from the cathode to the anode, causing current to flow. The device only allows the flow of current in one direction, making it a rectifier. It also acts as a controlled switch, as it can be used to switch the flow of current on and off.The device also has a high current carrying capability, making it suitable for applications requiring high power. The diode is also designed to be fast and efficient, as it has a low forward voltage drop and high switching speeds. This makes it suitable for high-speed power supply applications, such as the ones mentioned earlier.
Conclusion
The ESH3CHE3/57T is a high-efficiency rectifier diode that is used in a multitude of applications. It is easy to integrate into a variety of systems due to its high reliability, fast switching speed and low forward voltage drop. The device is designed for both rectification and signal switching applications, making it a versatile device that is suitable for a range of uses.
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Part Number | Manufacturer | Price | Quantity | Description |
---|
ESH337M050AH4AA | KEMET | 0.26 $ | 116 | CAP ALUM 330UF 20% 50V RA... |
ESH3DHE3_A/H | Vishay Semic... | 0.29 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
ESH3D-E3/57T | Vishay Semic... | -- | 1000 | DIODE GEN PURP 200V 3A DO... |
ESH3B-E3/57T | Vishay Semic... | -- | 1000 | DIODE GEN PURP 100V 3A DO... |
ESH3BHE3/9AT | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 100V 3A DO... |
ESH3D M6G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
ESH3C-E3/9AT | Vishay Semic... | -- | 1000 | DIODE GEN PURP 150V 3A DO... |
ESH337M025AG3AA | KEMET | 0.18 $ | 8579 | CAP ALUM 330UF 20% 25V RA... |
ESH3DHE3/9AT | Vishay Semic... | -- | 1000 | DIODE GEN PURP 200V 3A DO... |
ESH3D-M3/57T | Vishay Semic... | 0.16 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
ESH3CHE3_A/I | Vishay Semic... | 0.21 $ | 1000 | DIODE GEN PURP 150V 3A DO... |
ESH3B V7G | Taiwan Semic... | 0.1 $ | 1000 | DIODE GEN PURP 100V 3A DO... |
ESH3B-M3/57T | Vishay Semic... | 0.16 $ | 1000 | DIODE GEN PURP 100V 3A DO... |
ESH3B-E3/9AT | Vishay Semic... | -- | 1000 | DIODE GEN PURP 100V 3A DO... |
ESH3B R7G | Taiwan Semic... | 0.11 $ | 1000 | DIODE GEN PURP 100V 3A DO... |
ESH3C-E3/57T | Vishay Semic... | 0.21 $ | 1000 | DIODE GEN PURP 150V 3A DO... |
ESH3C V7G | Taiwan Semic... | 0.1 $ | 1000 | DIODE GEN PURP 150V 3A DO... |
ESH3B-M3/9AT | Vishay Semic... | 0.16 $ | 1000 | DIODE GEN PURP 100V 3A DO... |
ESH3D-M3/9AT | Vishay Semic... | 0.16 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
ESH337M035AH1AA | KEMET | 0.17 $ | 5571 | CAP ALUM 330UF 20% 35V RA... |
ESH3C M6G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 150V 3A DO... |
ESH3BHE3/57T | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 100V 3A DO... |
ESH3D V7G | Taiwan Semic... | 0.1 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
ESH3C-M3/57T | Vishay Semic... | 0.16 $ | 1000 | DIODE GEN PURP 150V 3A DO... |
ESH3C V6G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 150V 3A DO... |
ESH336M050AC3AA | KEMET | 0.12 $ | 8765 | CAP ALUM 33UF 20% 50V RAD... |
ESH336M035AC3AA | KEMET | 0.1 $ | 6191 | CAP ALUM 33UF 20% 35V RAD... |
ESH3D V6G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
ESH3B V6G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 100V 3A DO... |
ESH3C-M3/9AT | Vishay Semic... | 0.16 $ | 1000 | DIODE GEN PURP 150V 3A DO... |
ESH337M016AG3AA | KEMET | 0.16 $ | 11995 | CAP ALUM 330UF 20% 16V RA... |
ESH3CHE3_A/H | Vishay Semic... | 0.21 $ | 1000 | DIODE GEN PURP 150V 3A DO... |
ESH3DHE3/57T | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
ESH3D R7G | Taiwan Semic... | 0.11 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
ESH3C R7G | Taiwan Semic... | 0.11 $ | 1000 | DIODE GEN PURP 150V 3A DO... |
ESH3CHE3/57T | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 150V 3A DO... |
ESH3B M6G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 100V 3A DO... |
ESH3D-E3/9AT | Vishay Semic... | -- | 1000 | DIODE GEN PURP 200V 3A DO... |
ESH338M010AL3AA | KEMET | 0.35 $ | 804 | CAP ALUM 3300UF 20% 10V R... |
ESH3DHE3_A/I | Vishay Semic... | -- | 1000 | DIODE GEN PURP 200V 3A DO... |
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