Allicdata Part #: | F3L100R07W2E3B11BOMA1-ND |
Manufacturer Part#: |
F3L100R07W2E3B11BOMA1 |
Price: | $ 36.57 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT MODULE VCES 600V 200A |
More Detail: | IGBT Module Trench Field Stop Three Phase Inverter... |
DataSheet: | F3L100R07W2E3B11BOMA1 Datasheet/PDF |
Quantity: | 1000 |
15 +: | $ 33.23960 |
Series: | -- |
Part Status: | Active |
IGBT Type: | Trench Field Stop |
Configuration: | Three Phase Inverter |
Voltage - Collector Emitter Breakdown (Max): | 650V |
Current - Collector (Ic) (Max): | 117A |
Power - Max: | 300W |
Vce(on) (Max) @ Vge, Ic: | 1.9V @ 15V, 100A |
Current - Collector Cutoff (Max): | 1mA |
Input Capacitance (Cies) @ Vce: | 6.2nF @ 25V |
Input: | Standard |
NTC Thermistor: | Yes |
Operating Temperature: | -40°C ~ 150°C |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
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Transistors
A transistor is a semiconductor device used to amplify or switch electronic signals and electrical power. It is composed of semiconductor material usually with at least three terminals for connection to an external circuit. A voltage or current applied to one pair of the transistor\'s terminals controls the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal. Today, some transistors are packaged individually, but numerous transistors are found embedded in integrated circuits.
IGBTs
Insulated-gate bipolar transistors (IGBTs) are three-terminal power semiconductor devices primarily used as electronic switches, which contrast with bipolar junction transistors (BJTs) which function as current regulators. The IGBT is a semiconductor device with four alternating layers that are controlled by a metal-oxide-semiconductor (MOS) gate structure with its metal-insulator-semiconductor (MIS) structure at the base. An IGBT is a semiconductor device with an insulated gate, which is responsible for controlling the current that passes between the two terminals, the collector and emitter. An IGBT is a combination of a MOSFET (metal–oxide–semiconductor field-effect transistor) and a BJT (bipolar junction transistor), and is used as a switch for various applications.
F3L100R07W2E3B11BOMA1
Application Field and Working Principle
F3L100R07W2E3B11BOMA1, also known as F3L IGBT module, is a product of the semiconductor IGBT family. It is a three-terminal, insulated-gate bipolar transistor (IGBT) module capable of handling an average blocking voltage of 100 volts. The F3L IGBT module offers high speed switching, high surge current characteristic and low conduction losses. F3L100R07W2E3B11BOMA1 is mainly used in power supplies, motor drivers, converters, UPS systems, appliance control, etc.
The working principle of F3L100R07W2E3B11BOMA1 is based on the same principle as any other IGBT. It is basically an insulated gate bipolar transistor in which the current flow is controlled by a gate. As current is applied to the gate, it creates an electric field which then generates a large current across the collector and emitter. This current then creates a voltage drop across the collector-emitter terminals which can be used to control the device. Since the collector terminal is connected to the gate, the voltage drop is directly proportional to the current applied to the gate. This makes the F3L IGBT module a very efficient device as it reduces electrical loss.
The specific data is subject to PDF, and the above content is for reference
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