F3L150R12W2H3B11BPSA1

Series:	--
Part Status:	Active
IGBT Type:	--
Configuration:	Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max):	1200V
Current - Collector (Ic) (Max):	75A
Power - Max:	500W
Vce(on) (Max) @ Vge, Ic:	1.75V @ 15V, 75A
Current - Collector Cutoff (Max):	1mA
Input Capacitance (Cies) @ Vce:	8.7nF @ 25V
Input:	Standard
NTC Thermistor:	Yes
Operating Temperature:	-40°C ~ 150°C
Mounting Type:	Chassis Mount
Package / Case:	Module
Supplier Device Package:	Module

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

F3L150R12W2H3B11BPSA1 is a type of IGBT (Insulated Gate Bipolar Transistor) module. It is a type of semiconductor module and has the ability to switch rapidly and efficiently. This technology is used in many applications and can be found in electronics such as power supplies, inverters, motor drives, and converters.The F3L150R12W2H3B11BPSA1 can be used in several different applications such as power supplies, motor drives, inverters, and converters. The main use of this module is to convert electricity from AC to DC, or vice versa. It can also be used as a switch to provide power to a motor or other electrical device. It is also used in industrial and commercial applications, such as home appliance motors, loudspeakers, and air-conditioners.In terms of its working principle, the F3L150R12W2H3B11BPSA1 works by controlling the flow of electrons between two semiconductor junctions. The two junctions are connected by two electrodes, the gate and the collector. When current flows through the two electrodes in opposite directions, it creates a phenomenon known as the PN-junction. This junction allows for a large current to flow through it, but the amount of current that can flow through the junction is limited by the gate voltage. The gate voltage is controlled by the external load or voltage source, and the electrons passing through the junction can be switched on and off with this gate voltage.When the module is in its “off” state, no current is passed through the junction, and the gate voltage is kept low. This “off” state is achieved by applying a small reverse bias to the gate terminal. When the gate voltage is increased, the current flowing through the junction is increased, and the module is said to be in its “on” state.The F3L150R12W2H3B11BPSA1 module is extremely efficient and reliable, and can handle a wide range of power requirements. It has a high breakdown voltage and low saturation voltage, which makes it ideal for high power applications. It is also designed to handle a wide range of temperatures and is easily cooled down using a thermal pad or fan.One of the disadvantages of using the F3L150R12W2H3B11BPSA1 module is the cost. This type of module is more expensive than other types of semiconductor modules due to the fact that it is a complex technology that requires a lot of testing and validation. Other disadvantages include the fact that the operating temperature range of the module is limited, and that the module can only handle relatively low voltage applications.The F3L150R12W2H3B11BPSA1 module is an excellent choice for applications that require high performance, low power consumption and high speed switching. It is used in a wide variety of applications, such as power supplies, motor drives, inverters, and inverters. It is also widely used in industrial and commercial applications, such as air-conditioners, loudspeakers, and home appliances motors. Its low cost and high performance make it a popular choice for many applications.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description