Allicdata Part #: | F3L15R12W2H3B27BOMA1-ND |
Manufacturer Part#: |
F3L15R12W2H3B27BOMA1 |
Price: | $ 38.37 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT MODULE VCES 1200V 15A |
More Detail: | IGBT Module 3 Independent 1200V 20A 145W Chassis ... |
DataSheet: | F3L15R12W2H3B27BOMA1 Datasheet/PDF |
Quantity: | 1000 |
15 +: | $ 34.87680 |
Series: | -- |
Part Status: | Active |
IGBT Type: | -- |
Configuration: | 3 Independent |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 20A |
Power - Max: | 145W |
Vce(on) (Max) @ Vge, Ic: | 2.4V @ 15V, 15A |
Current - Collector Cutoff (Max): | 1mA |
Input Capacitance (Cies) @ Vce: | 875pF @ 25V |
Input: | Standard |
NTC Thermistor: | Yes |
Operating Temperature: | -40°C ~ 150°C |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
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F3L15R12W2H3B27BOMA is a type of insulated-gate bipolar transistor (IGBT) module. This module is one of the most popular among the available IGBT module families, as it offers a number of advantages over other members of the family. The most common application of F3L15R12W2H3B27BOMA is in the control and switching of electrical power, typically at high voltage and current levels.
The operating principle of this type of IGBT module is a combination of bipolar junction transistor (BJT) and gate field-effect transistor (FET) components. The IGBT module takes the best characteristics of each of these devices and combines them, enabling higher performance and power control. The main operation of the module is based on the on-current amplification characteristics of the BJT and the gate “switch” capability of the FET.
The working principle of the F3L15R12W2H3B27BOMA module is based on the dual-junction design of the BJT transistor. This design enables the IGBT module to provide gate-controlled current switching with very low gate-drive power. The low gate-drive power is used to control the gate current, which in turn is used to control the collector-emitter voltage and the corresponding resistance of the BJT. The result is improved efficiency, increased power-handling capability, and optimized gate-drive current.
The F3L15R12W2H3B27BOMA module is commonly used in a variety of industrial applications such as solar and wind power systems, UPS systems, industrial robotic controls, and power supplies. This type of IGBT module can also be used in applications requiring low output impedance and very high dynamic range switches. The F3L15R12W2H3B27BOMA module is also used in some automotive applications such as DC motor controllers, lighting systems, and power supplies.
The F3L15R12W2H3B27BOMA module can be used in a wide range of power switching applications. Its low gate-drive power and high IGBT switching frequency makes it a suitable choice for applications requiring fast switching speed and improved power efficiency. This type of IGBT module is also used in applications requiring very low switching losses, such as high-efficiency power converters. Its wide voltage and current ratings make the F3L15R12W2H3B27BOMA suitable for use in both small, isolated systems and large-scale, multi-stage networks.
Overall, the F3L15R12W2H3B27BOMA is a type of IGBT module that offers both high efficiency and great power handling capabilities. It is commonly used in a variety of industrial and automotive applications because of its versatile design, low gate-drive power, and high IGBT switching frequency. The module is an excellent choice for applications requiring a combination of fast switching speed, low output impedance, and improved power efficiency.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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F3L15R12W2H3B27BOMA1 | Infineon Tec... | 38.37 $ | 1000 | IGBT MODULE VCES 1200V 15... |
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