F3L300R12ME4B22BOSA1 Allicdata Electronics
Allicdata Part #:

F3L300R12ME4B22BOSA1-ND

Manufacturer Part#:

F3L300R12ME4B22BOSA1

Price: $ 120.62
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT MODULE VCES 650V 300A
More Detail: IGBT Module Trench Field Stop 2 Independent 1200V ...
DataSheet: F3L300R12ME4B22BOSA1 datasheetF3L300R12ME4B22BOSA1 Datasheet/PDF
Quantity: 1000
10 +: $ 109.65400
Stock 1000Can Ship Immediately
$ 120.62
Specifications
Series: --
Part Status: Active
IGBT Type: Trench Field Stop
Configuration: 2 Independent
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 450A
Power - Max: 1550W
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 300A
Current - Collector Cutoff (Max): 1mA
Input Capacitance (Cies) @ Vce: 19nF @ 25V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module
Description

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An F3L300R12ME4B22BOSA1 IGBT module is a common example of an advanced electrical component used in various industrial applications. This module utilizes a unique body structure, gate driver, and circuit design that allow it to manage high-voltage and high-power with the utmost efficiency. This advanced component can be found in computer processing and automation, solar energy systems, air conditioning, motor speed control, power electronics, high-power amplifiers, and industrial motor control.

The F3L300R12ME4B22BOSA1 IGBT module is composed of several components that feature both active and passive elements. Its body structure includes a voltage-controlled MOSFET (V-MOSFET) that regulates the current flow, an insulated gate bipolar transistor (IGBT), a diode, and a heat sink to dissipate the heat that occurs due to the operation. The total arrangement of all these elements is the main key to the advanced functions of the device. The IGBT module also comprises of a trigger circuit called the gate driver, which is responsible for controlling the conduction flow. This circuit is composed of power sources and transistors that enable the triggering of electrical current.

The main working principle behind the F3L300R12ME4B22BOSA1 IGBT module is the usage of a switching signal generated by an external switching device. This signal is given to the gate driver, which creates a voltage cylinder between the emitter and the collector of the component. The voltage cylinder modulates the conduction path between the cathode and the anode to supply or cut off the current flow. The current control is possible with the help of the bidirectional electrical charges that are generated between the polarities of the component.

The F3L300R12ME4B22BOSA1 IGBT module is an effective component that makes the whole industrial process more efficient. Its high-power and high-voltage capabilities are ideal for numerous industrial automation and power electronics applications that require more dependable and adjustable current control. Thanks to its sophisticated gate driver and body structure, this component can increase efficiency and reduce production costs. Furthermore, the F3L300R12ME4B22BOSA1 IGBT module has advanced production techniques that also promote shorter installation and operation time, making it a reliable and cost-effective choice for industrial use.

The specific data is subject to PDF, and the above content is for reference

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