Allicdata Part #: | F3L300R12ME4B22BOSA1-ND |
Manufacturer Part#: |
F3L300R12ME4B22BOSA1 |
Price: | $ 120.62 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT MODULE VCES 650V 300A |
More Detail: | IGBT Module Trench Field Stop 2 Independent 1200V ... |
DataSheet: | F3L300R12ME4B22BOSA1 Datasheet/PDF |
Quantity: | 1000 |
10 +: | $ 109.65400 |
Series: | -- |
Part Status: | Active |
IGBT Type: | Trench Field Stop |
Configuration: | 2 Independent |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 450A |
Power - Max: | 1550W |
Vce(on) (Max) @ Vge, Ic: | 2.1V @ 15V, 300A |
Current - Collector Cutoff (Max): | 1mA |
Input Capacitance (Cies) @ Vce: | 19nF @ 25V |
Input: | Standard |
NTC Thermistor: | Yes |
Operating Temperature: | -40°C ~ 150°C |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
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An F3L300R12ME4B22BOSA1 IGBT module is a common example of an advanced electrical component used in various industrial applications. This module utilizes a unique body structure, gate driver, and circuit design that allow it to manage high-voltage and high-power with the utmost efficiency. This advanced component can be found in computer processing and automation, solar energy systems, air conditioning, motor speed control, power electronics, high-power amplifiers, and industrial motor control.
The F3L300R12ME4B22BOSA1 IGBT module is composed of several components that feature both active and passive elements. Its body structure includes a voltage-controlled MOSFET (V-MOSFET) that regulates the current flow, an insulated gate bipolar transistor (IGBT), a diode, and a heat sink to dissipate the heat that occurs due to the operation. The total arrangement of all these elements is the main key to the advanced functions of the device. The IGBT module also comprises of a trigger circuit called the gate driver, which is responsible for controlling the conduction flow. This circuit is composed of power sources and transistors that enable the triggering of electrical current.
The main working principle behind the F3L300R12ME4B22BOSA1 IGBT module is the usage of a switching signal generated by an external switching device. This signal is given to the gate driver, which creates a voltage cylinder between the emitter and the collector of the component. The voltage cylinder modulates the conduction path between the cathode and the anode to supply or cut off the current flow. The current control is possible with the help of the bidirectional electrical charges that are generated between the polarities of the component.
The F3L300R12ME4B22BOSA1 IGBT module is an effective component that makes the whole industrial process more efficient. Its high-power and high-voltage capabilities are ideal for numerous industrial automation and power electronics applications that require more dependable and adjustable current control. Thanks to its sophisticated gate driver and body structure, this component can increase efficiency and reduce production costs. Furthermore, the F3L300R12ME4B22BOSA1 IGBT module has advanced production techniques that also promote shorter installation and operation time, making it a reliable and cost-effective choice for industrial use.
The specific data is subject to PDF, and the above content is for reference
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