Allicdata Part #: | F3L300R12MT4B23BOSA1-ND |
Manufacturer Part#: |
F3L300R12MT4B23BOSA1 |
Price: | $ 124.17 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOD IGBT MED POWER ECONOD-3 |
More Detail: | IGBT Module Trench Field Stop Half Bridge 1200V 45... |
DataSheet: | F3L300R12MT4B23BOSA1 Datasheet/PDF |
Quantity: | 1000 |
10 +: | $ 112.88000 |
Series: | EconoDUAL™ 3 |
Part Status: | Active |
IGBT Type: | Trench Field Stop |
Configuration: | Half Bridge |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 450A |
Power - Max: | 1550W |
Vce(on) (Max) @ Vge, Ic: | 2.1V @ 15V, 300A |
Current - Collector Cutoff (Max): | 1mA |
Input Capacitance (Cies) @ Vce: | 19nF @ 25V |
Input: | Standard |
NTC Thermistor: | Yes |
Operating Temperature: | -40°C ~ 150°C |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
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F3L300R12MT4B23BOSA1 Application Field and Working Principle
The F3L300R12MT4B23BOSA1 is a IGBT module based on the Insulated Gate Bipolar Transistor (IGBT) technology, which combines the advantages of a low on-state voltage drop and high currents. It is designed for use in medium and high power applications such as motor control, welding and other high current, high power applications. IGBT modules offer a robust, reliable, and cost-effective power solution for these power-sensitive applications.
Applications
The F3L300R12MT4B23BOSA1 IGBT module can be used in motor control, welding and other high current, high power applications. The module has a nominal current rating of 300A and a nominal voltage of 1200V. It is suitable for applications where high power and high speeds are required such as motor control, welding and electric drives. It can be used in a variety of applications such as solar inverters, wind turbines and AC/DC converters. The F3L300R12MT4B23BOSA1 IGBT module offers a cost-effective power solution for medium and high power applications.
Working Principle
The F3L300R12MT4B23BOSA1 IGBT module is based on the Insulated Gate Bipolar Transistor (IGBT) technology. The IGBT technology is a combination of two existing transistor technologies – MOSFETs and bipolar transistors. The IGBT offers several advantages such as low on-state voltage drop and high currents. It is a voltage-controlled device that has the input and output terminals that can be considered isolated from each other. The IGBT utilizes a gate-controlled insulated gate to control electric current flow and consists of three types of terminals — the gate, the collector, and the emitter.
The gate-controlled insulated gate is the input of the IGBT and can be considered isolated from the output terminals. It controls electric current flow by using a low voltage input signal to regulate the current through the transistor. The collector terminal is the output of the transistor and is used to collect the electric current. The emitter terminal is the source of the electric current and is used to create the input voltage.
Conclusion
The F3L300R12MT4B23BOSA1 IGBT module is a cost-effective and reliable power solution for medium and high power applications such as motor control, welding and other high current applications. This IGBT module offers a low on-state voltage drop and high current carrying capability and provides a robust, reliable and cost-effective power solution for these applications. The F3L300R12MT4B23BOSA1 IGBT module has a nominal current rating of 300A and a nominal voltage of 1200V, which makes it suitable for use in applications where high power and high speeds are required.
The specific data is subject to PDF, and the above content is for reference
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