Allicdata Part #: | F3L300R12MT4PB23BPSA1-ND |
Manufacturer Part#: |
F3L300R12MT4PB23BPSA1 |
Price: | $ 131.52 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MEDIUM POWER ECONO |
More Detail: | IGBT Module Trench Field Stop Half Bridge 1200V 30... |
DataSheet: | F3L300R12MT4PB23BPSA1 Datasheet/PDF |
Quantity: | 1000 |
6 +: | $ 119.56100 |
Series: | EconoDUAL™ 3 |
Part Status: | Active |
IGBT Type: | Trench Field Stop |
Configuration: | Half Bridge |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 300A |
Power - Max: | 20mW |
Vce(on) (Max) @ Vge, Ic: | 2.1V @ 15V, 300A |
Current - Collector Cutoff (Max): | 1mA |
Input Capacitance (Cies) @ Vce: | 19nF @ 25V |
Input: | Standard |
NTC Thermistor: | Yes |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
F3L300R12MT4PB23BPSA1 is an insulated gate bipolar transistor (IGBT) module composed of three IGBTs in a common gate on a base plate. It is suitable for high-frequency switching applications in various electronic equipment. It is designed to provide a reliable power switch to meet the requirements of various high-power switching applications.
The F3L300R12MT4PB23BPSA1 module contains three IGBTs, a free-wheel diode (FWD), a snubber network and logic control circuits. The IGBTs have a blocking voltage of 1200V, an on-state current of 300A and an off-state current of up to 10000 Vr.m.s. The FWD has a blocking voltage of 1000V and an on-state current of 50A. The snubber network is composed of resistors and capacitors.
The F3L300R12MT4PB23BPSA1 module is ideally suited for high-frequency switching applications such as motor drives, AC/DC converters, power supplies and motor controls. It is also suitable for controlling light loads, such as lighting, and for driving high-current devices, such as solenoids and relays. The module is designed to work in harsh environment, withstanding temperatures from -40°C to +150°C and high humidity.
The working principle of the module is based on the IGBTs, which are a combination of a field-effect transistor (FET) and a bipolar junction transistor (BJT). This combination makes it possible to switch high power at high frequency with low losses. The IGBTs are triggered by the logic control circuits, which provide a low-level control signal. This signal is amplified through the pulsed gate drive circuits, which create the high voltage needed to turn on and off the IGBTs. When they are switched off, the free-wheel diode acts as a short circuit, dissipating the energy stored in the inductive load and preventing it from damaging the IGBTs. The snubber network also protects the module from overvoltage and EMI.
The F3L300R12MT4PB23BPSA1 module is an ideal solution for high power switching applications as it provides a low-loss, high-frequency switch with a reliable safety system. It is designed to meet the high power requirements of various electronic equipment, while providing a safe and reliable power switch.
The specific data is subject to PDF, and the above content is for reference
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