F4150R06KL4BOSA1 Allicdata Electronics
Allicdata Part #:

F4150R06KL4BOSA1-ND

Manufacturer Part#:

F4150R06KL4BOSA1

Price: $ 95.85
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOD IGBT LOW PWR ECONO2-6
More Detail: IGBT Module Full Bridge 600V 180A 570W Chassis Mo...
DataSheet: F4150R06KL4BOSA1 datasheetF4150R06KL4BOSA1 Datasheet/PDF
Quantity: 1000
10 +: $ 87.13390
Stock 1000Can Ship Immediately
$ 95.85
Specifications
Series: --
Part Status: Not For New Designs
IGBT Type: --
Configuration: Full Bridge
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 180A
Power - Max: 570W
Vce(on) (Max) @ Vge, Ic: 2.55V @ 15V, 150A
Current - Collector Cutoff (Max): 5mA
Input Capacitance (Cies) @ Vce: 6.5nF @ 25V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 125°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module
Description

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Transistors - IGBTs - Modules

The F4150R06KL4BOSA1 module is a highly desirable choice when it comes to selecting an IGBT module. Widely used in a range of applications, this module is favored for its built-in features and its overall performance. Let\'s take a closer look at the application field and working principle for the F4150R06KL4BOSA1 module.

Application Field

The F4150R06KL4BOSA1 is especially useful in motor control applications, specifically those involving high-power operations. Its high power capability makes it an ideal choice for those who need to drive large motors, as it can handle the high voltages and currents associated with doing so. It is also suitable for a variety of other applications such as induction heating control, photovoltaic inverters, and electric vehicle drive systems. In each of these applications, the F4150R06KL4BOSA1 can be used to control and regulate the power flow.

Working Principle

The working principle of the F4150R06KL4BOSA1 module is based on the use of insulated gate bipolar transistors (IGBTs). IGBTs are a type of transistor which are used for switching and amplifying electronic signals. An IGBT consists of three different layers: the emitter, the collector, and the base. A high electric field is applied between the emitter and the collector while the base is connected to an external signal source. This signal source is used to control the current flow between the emitter and the collector. The module is capable of switching the current on and off quickly, with very little power loss.

Conclusion

The F4150R06KL4BOSA1 module is a high-performance IGBT module that is ideal for motor control applications. It is also suitable for a variety of other applications thanks to its ability to switch and regulate high currents with minimal power loss. The module works on the principle of insulated gate bipolar transistors and can be used to quickly and efficiently manage the flow of power in a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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