F4150R12KS4BOSA1 Allicdata Electronics
Allicdata Part #:

F4150R12KS4BOSA1-ND

Manufacturer Part#:

F4150R12KS4BOSA1

Price: $ 148.65
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT MODULE VCES 1200V 150A
More Detail: IGBT Module Three Phase Inverter 1200V 180A 960W ...
DataSheet: F4150R12KS4BOSA1 datasheetF4150R12KS4BOSA1 Datasheet/PDF
Quantity: 1000
10 +: $ 135.13800
Stock 1000Can Ship Immediately
$ 148.65
Specifications
Series: --
Part Status: Active
IGBT Type: --
Configuration: Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 180A
Power - Max: 960W
Vce(on) (Max) @ Vge, Ic: 3.75V @ 15V, 150A
Current - Collector Cutoff (Max): 5mA
Input Capacitance (Cies) @ Vce: 10nF @ 25V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 125°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

F4150R12KS4BOSA1 is a semiconductor module manufactured by Semikron, mainly used in motor control, switching power supplies, welding machines, and other applications. It consists of two integrated IGBT and one FRD (Free-Wheeling Diode) chips that are mounted on their heat sink and cooled by forced air. This type of module has an ultra low Eon rating, and the maximum switching frequency is 200kHz.

The application field of F4150R12KS4BOSA1 is wide and varied, including light, medium and even heavy industrial applications such as renewable energy, robotics, robotics, automotive, welding and plasma cutting.

In terms of working principle, the module works by combining the parallel connected IGBTs and FRD, which together offer a very high current capability, together with a low on-state voltage drop. As the current increases, the voltage across the IGBT decreases until it reaches the blocking voltage threshold value, at which point the IGBT gate is switched off. The FRD then starts working in reverse recovery mode, dissipating the energy stored in the gate region of the IGBTs.

Additionally, the module provides over temperature protection, which is designed to provide smooth and safe operation even under extreme environmental conditions. It also supports voltage and current monitoring systems, which can help provide more insight into the operational status of the module.

In conclusion, the F4150R12KS4BOSA1 is an excellent choice for medium and heavy industrial applications, as it has many features to offer, such as high current capability, low on-state voltage drop, over temperature protection, voltage and current monitoring, and more. With its wide range of applications, this type of module is capable of meeting the most demanding requirements.

The specific data is subject to PDF, and the above content is for reference

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