Allicdata Part #: | F4150R17ME4B11BPSA1-ND |
Manufacturer Part#: |
F4150R17ME4B11BPSA1 |
Price: | $ 117.45 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOD IGBT MED POWER ECONO-6 |
More Detail: | IGBT Module Trench Field Stop Full Bridge 1700V 23... |
DataSheet: | F4150R17ME4B11BPSA1 Datasheet/PDF |
Quantity: | 1000 |
6 +: | $ 106.76800 |
Series: | EconoDUAL™ 3 |
Part Status: | Active |
IGBT Type: | Trench Field Stop |
Configuration: | Full Bridge |
Voltage - Collector Emitter Breakdown (Max): | 1700V |
Current - Collector (Ic) (Max): | 230A |
Vce(on) (Max) @ Vge, Ic: | 2.3V @ 15V, 150A |
Current - Collector Cutoff (Max): | 3mA |
Input Capacitance (Cies) @ Vce: | 12nF @ 25V |
Input: | Standard |
NTC Thermistor: | No |
Operating Temperature: | -40°C ~ 150°C |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
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F4150R17ME4B11BPSA1, which belongs to the category of Transistors – IGBTs – Modules, is used for a wide range of applications. The device is a small, robust and efficient IGBT module for industrial, medical and consumer markets, designed to perform power switching operations at high frequencies and low losses. The IGBT module can be used in a variety of ways, including motor control, switching mode power supply, motor drive and DC-DC conversion.
The F4150R17ME4B11BPSA1 IGBT module is composed of an IGBT die and fast recovery diode die mounted on an insulated metallic substrate. The IGBT die contains a pair of back-to-back IGBTs, which are connected in anti-parallel configuration and allows the module to turn on and off quickly with low losses. The fast recovery diode die provide improved switching performance, transient suppression and EMI/RFI immunity.
The F4150R17ME4B11BPSA1 IGBT module is designed to operate with low gate voltages and can provide high efficiency while minimizing device conduction losses. It is also designed with advanced design techniques that improve its thermal performance and reliability. The device is capable of providing a high frequency of operation, a low voltage drop and a wide range of power switching applications. The module can also be used in a variety of systems where efficient, reliable and cost effective power switching is required.
The working principle of F4150R17ME4B11BPSA1 IGBT module is based on the principle of charged carrier injection. The IGBT is a voltage-controlled device, and its gate voltage determines the current flow through the IGBT\'s drain and source terminals. When the gate voltage is applied, a certain level of charge carriers (electrons or holes) are injected into the IGBT’s gate. The injected charge increases the conductance of the IGBT, allowing current to flow from its drain to its source. The level of the injected charge carriers can be controlled by varying the gate voltage.
F4150R17ME4B11BPSA1 IGBT module can be used in a wide range of applications, such as motor control, frequency changer, motor drive, switched mode power supply, DC-DC conversion and more. It is designed to offer high efficiency, reliability and cost-effectiveness. Furthermore, the F4150R17ME4B11BPSA1 also offers advanced design techniques that improve its thermal performance and reliability, as well as its high frequency of operation, low voltage drop and wide range of power switching applications.
The specific data is subject to PDF, and the above content is for reference
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