FC6946010R Allicdata Electronics
Allicdata Part #:

FC6946010RTR-ND

Manufacturer Part#:

FC6946010R

Price: $ 0.06
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: MOSFET 2N-CH 60V 0.1A SSMINI6
More Detail: Mosfet Array 2 N-Channel (Dual) 60V 100mA 125mW Su...
DataSheet: FC6946010R datasheetFC6946010R Datasheet/PDF
Quantity: 48000
8000 +: $ 0.05579
Stock 48000Can Ship Immediately
$ 0.06
Specifications
Vgs(th) (Max) @ Id: 1.5V @ 1µA
Base Part Number: FC694601
Supplier Device Package: SSMini6-F3-B
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power - Max: 125mW
Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 3V
Gate Charge (Qg) (Max) @ Vgs: --
Series: --
Rds On (Max) @ Id, Vgs: 12 Ohm @ 10mA, 4V
Current - Continuous Drain (Id) @ 25°C: 100mA
Drain to Source Voltage (Vdss): 60V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The FC6946010R is a field effect transistor (FET) array designed to provide high speed and low power for data transfer applications. It is typically used in switching systems, digital to analog converters, and interface circuits, allowing for a wide range of applications.

The FC6946010R is a type of metal oxide semiconductor FET (MOSFET) array that uses a number of transistors arranged in a formation known as a “gate-array”. The gate-array consists of several individual MOSFET transistors that share a common gate structure. This allows for a high level of integration and reduces the overall device size. Each MOSFET is designed to have either an n-channel or a p-channel, depending on its construction and the current polarity.

The operating principle of the FC6946010R is pretty straightforward. Each transistor is biased to its On-state or Off-state depending on the voltage that is applied to its gate. It is important to note that each transistor will require its own voltage to enable or disable it - this can be accomplished by adding a series of resistors to create a voltage divider network to ensure each transistor receives the correct voltage.

When the appropriate voltage is applied to each gate, the individual transistors will then be controlled by the source and the drain pins. The source pins will source current (move electrons from source to drain) when the transistor is in its “on” state. When the transistor is in its “off” state, no current will flow from the source to the drain.

The main advantage of using the FC6946010R is its speed and low power consumption. It can operate at high frequencies for data transfer applications, allowing for very fast transfer speeds. It also has a very low power consumption, meaning it doesn’t require much energy to operate. This makes it ideal for applications where power savings is important.

The FC6946010R is widely used in many different applications, including switching systems, digital to analog converters, and interface circuits. It can also be used in applications where speed and low power consumption are key requirements. In addition, the FC6946010R can be combined with other transistors or metal oxide transistors to create multi-transistor array systems, increasing the device’s capabilities and control.

In summary, the FC6946010R is a type of MOSFET array that is designed to provide high speed and low power consumption for digital data transfer applications. It can be used in a wide range of applications, and its individual transistors can be controlled by the source and drain pins. The main advantage of the FC6946010R is its speed and low power consumption, making it ideal for applications where power savings are important.

The specific data is subject to PDF, and the above content is for reference

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