FCAB21520L1 Allicdata Electronics
Allicdata Part #:

P122278TR-ND

Manufacturer Part#:

FCAB21520L1

Price: $ 0.53
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: MOSFET 2 N-CHANNEL 10SMD
More Detail: Mosfet Array 2 N-Channel (Dual) 3.8W (Ta) Surfac...
DataSheet: FCAB21520L1 datasheetFCAB21520L1 Datasheet/PDF
Quantity: 3000
1000 +: $ 0.48024
Stock 3000Can Ship Immediately
$ 0.53
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): --
Current - Continuous Drain (Id) @ 25°C: --
Rds On (Max) @ Id, Vgs: --
Vgs(th) (Max) @ Id: 1.4V @ 1.64mA
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 4V
Input Capacitance (Ciss) (Max) @ Vds: 5250pF @ 10V
Power - Max: 3.8W (Ta)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 10-SMD, No Lead
Supplier Device Package: 10-SMD
Description

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Introduction

FCAB21520L1 is a type of MOSFET array, specifically an N-channel MOSFET array in an extended SOA package. It has four high-performance MOSFETs with low on-resistance, low input and output capacitance, fast switching speed and low input, output gate capacitance. It is designed for automotive, telecom, computer and consumer applications.

Application Field

FCAB21520L1 is typically used in automotive, telecom, computer and consumer applications. Examples of applications include power management in DC-DC converters, line isolation and voltage protection, power supply sequencing, automotive lighting and infotainment systems, intelligent vehicle systems, and computer, consumer and telecom applications.

Working Principle

A MOSFET is an insulated-gate field-effect transistor and functions as a voltage-controlled electronic switch. The MOSFET is a four-terminal device with a source, gate, drain and body terminal. The structure of the device and its associated components, such as the transistors, capacitors and resistors, define the function and performance of the MOSFET. When a positive voltage is applied to the gate-source electrodes, the MOSFET turns on, allowing current to flow from source to drain. The on-state voltage of the MOSFET is determined by the gate-source voltage and the size of the MOSFET. When no voltage is applied to the gate-source electrodes, the MOSFET is in the off-state and no current can flow. FCAB21520L1 utilizes four independent MOSFETs in series to provide an on-state resistance that is substantially lower than that of an individual MOSFET. This improved on-state resistance improves energy efficiency and reduces power consumption in the involved circuits.

Advantages

FCAB21520L1 provides several advantages over other types of transistors. In comparison to BJT transistors, the MOSFET provides superior switching speeds and low output capacitance. In addition, the MOSFET’s input capacitance is much lower than the BJT, making it better suited for fast switching applications. The extended SOA package of the MOSFET array allows for a more compact design, as all four MOSFETs are located on the same package. This increases density and efficiency of the circuit and reduces costs. The reduced number of external components required can also reduce the complexity of the circuit and improve reliability. The MOSFET’s low input, output and body capacitances, along with its fast switching speeds, help to reduce switching losses and improve the overall efficiency of the circuit. The low input and output capacitances also help to reduce noise and EMI.

Conclusion

In conclusion, FCAB21520L1 is a type of MOSFET array designed for use in automotive, telecom, computer and consumer applications. It provides several advantages, including low on-resistance, low input and output capacitance, fast switching speed and low input, output gate capacitance. In addition, the extended SOA package provides a more compact design and improved efficiency, while the low capacitances and fast switching speeds reduce EMI and improve efficiency.

The specific data is subject to PDF, and the above content is for reference

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