
Allicdata Part #: | FD1000R33HE3KBPSA1-ND |
Manufacturer Part#: |
FD1000R33HE3KBPSA1 |
Price: | $ 1.39 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT MODULE VCES 1700V 1000A |
More Detail: | IGBT Module Trench Field Stop Dual Brake Chopper 3... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | $ 1.26000 |
Series: | -- |
Part Status: | Active |
IGBT Type: | Trench Field Stop |
Configuration: | Dual Brake Chopper |
Voltage - Collector Emitter Breakdown (Max): | 3300V |
Current - Collector (Ic) (Max): | 1000A |
Power - Max: | 11500W |
Vce(on) (Max) @ Vge, Ic: | 3.1V @ 15V, 1000A |
Current - Collector Cutoff (Max): | 5mA |
Input Capacitance (Cies) @ Vce: | 190nF @ 25V |
Input: | Standard |
NTC Thermistor: | No |
Operating Temperature: | -40°C ~ 150°C |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Transistors - IGBTs - Modules
The FD1000R33HE3KBPSA1 is a high-efficiency, high-performance module, designed to better regulate voltage and current in several applications. The FD1000R33HE3KBPSA1 offers wide operating ranges, low losses, and the highest power density available in the industry.
The FD1000R33HE3KBPSA1 is a module suitable for applications that require high-efficiency and high-performance, such as telecommunications systems, automotive and industrial applications, medical instrumentation, medical imaging systems, waveform and measurement systems, as well as other integrated circuits.
The FD1000R33HE3KBPSA1 module contains a full complement of transistors and each transistor is a three terminal device with an N-channel and a P-channel transistor in parallel. The transistors are interconnected in a bridge configuration, which allows the module to control the voltage across the two main channels while maintaining the same current.
The FD1000R33HE3KBPSA1 has several features that make it attractive in various applications. The module’s wide operating range and high operating temperature enable the module to handle higher temperature applications, while its low loss and high power density make it suitable for a wide range of applications. Additionally, the incorporation of integrated circuits and the high-speed bus structure allow the module to handle high data transfer rate.
The working principle of the FD1000R33HE3KBPSA1 is based on the concept of bipolar transistor switches. This type of switch is used for the purpose of controlling current and voltage, as well as for providing protection from overvoltage and overcurrent. The transistors are arranged in the bridge configuration and are used to block off higher voltage by controlling the base voltage and the current to the transistors.
Each transistor has two terminals, which are connected to the gate and the source. The gate and the source terminals are used for controlling the current and voltage respectively. The voltage across the two terminals is regulated by the base voltage and the current is controlled by the gate.
In addition to the voltage and current control, the FD1000R33HE3KBPSA1 also offers a range of features including protection from overcurrent, overvoltage, and short circuit protection. Additionally, the module also offers isolation between the two channels and the modules internal components.
The FD1000R33HE3KBPSA1 is a high-efficiency and high-performance module, and has various features that make it suitable for many applications. The bridge configuration enables the module to control the voltage and current simultaneously and protect the device from overvoltage, overcurrent, and other faults.
The specific data is subject to PDF, and the above content is for reference
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