
Allicdata Part #: | FD200R12PT4B6BOSA1-ND |
Manufacturer Part#: |
FD200R12PT4B6BOSA1 |
Price: | $ 128.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT MODULE VCES 1200V 200A |
More Detail: | IGBT Module Trench Field Stop Three Phase Inverter... |
DataSheet: | ![]() |
Quantity: | 1000 |
6 +: | $ 116.39700 |
Series: | -- |
Part Status: | Active |
IGBT Type: | Trench Field Stop |
Configuration: | Three Phase Inverter |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 300A |
Power - Max: | 1100W |
Vce(on) (Max) @ Vge, Ic: | 2.1V @ 15V, 200A |
Current - Collector Cutoff (Max): | 15µA |
Input Capacitance (Cies) @ Vce: | 12.5nF @ 25V |
Input: | Standard |
NTC Thermistor: | Yes |
Operating Temperature: | -40°C ~ 150°C |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The FD200R12PT4B6BOSA1 is a gallium nitride (GaN)-based power module designed to provide optimal performance in a wide range of applications. This device is designed to reduce system power consumption, increase power density, and improve system reliability. It is suitable for various applications in the industrial and automotive markets. This article will discuss the device’s application field and working principle.
Application Field
The FD200R12PT4B6BOSA1 is a 600 kHz, variable operating frequency power module designed to meet the requirements of demanding applications. It is ideal for automotive charger applications, LED lighting applications, electric motor drives, and home appliance motor applications. Its wide operational range, low gate charge, and very low switching losses make it suitable for high efficiency and power density operations.
This device is a general-purpose power module that is designed to reduce the need for external power tracking and thermal compensation to simplify system design and improve system reliability. It can operate at voltages ranging from GT20V to GT1200V and at current ranges from 15A to 100A. It also features fault isolation, current sensing and monitoring, and over-temperature protection.
Working Principle
The FD200R12PT4B6BOSA1 is an integrated power module consisting of a full bridge of Gallium Nitride (GaN)-based MOSFETs and a gate driver circuit. The device features a 3-level half-bridge topology, with a built-in current sense and control circuitry. The half-bridge topology is utilized for proper operation at output and is able to provide seamless transition between voltage and current mode control.
The device works by supplying a gate driving signal to the GaN power transistors. This gate driving signal is used to switch the GaN FETs between the on and off states. When the transistor switch is turned on, the output voltage is increased, while when it is turned off the output voltage is decreased. The device also incorporates a current sensing circuit to ensure that no overloads occur while the device operates optimally.
The FD200R12PT4B6BOSA1 also features a built-in temperature sensing and control circuitry to ensure the device does not overheat during operation. This circuitry triggers a warning, if the temperature exceeds a certain limit and will shut down the module in the event of an overload or thermal runaway condition.
The device features a 3-pin package with a low-voltage turn-on sequence, allowing for fast starts with minimal ripple and thereby reducing noise. The built-in adjustable gate drive and short circuit protection ensure maximum system efficiency and compliance with UL, CUL, and TUV safety requirements.
In summary, the FD200R12PT4B6BOSA1 is an optimized GaN-based power module suitable for a wide range of applications. It features a wide operational range, low gate charge, and very low switching losses, making it ideal for high efficiency, power density operations. It is also equipped with a 3-level half-bridge topology, adjustable gate drives, and temperature sensing and control circuitry for improved system reliability. This device enables system designers to reduce design complexities and increase system efficiency.
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