FD200R12PT4B6BOSA1 Allicdata Electronics
Allicdata Part #:

FD200R12PT4B6BOSA1-ND

Manufacturer Part#:

FD200R12PT4B6BOSA1

Price: $ 128.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT MODULE VCES 1200V 200A
More Detail: IGBT Module Trench Field Stop Three Phase Inverter...
DataSheet: FD200R12PT4B6BOSA1 datasheetFD200R12PT4B6BOSA1 Datasheet/PDF
Quantity: 1000
6 +: $ 116.39700
Stock 1000Can Ship Immediately
$ 128.04
Specifications
Series: --
Part Status: Active
IGBT Type: Trench Field Stop
Configuration: Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 300A
Power - Max: 1100W
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 200A
Current - Collector Cutoff (Max): 15µA
Input Capacitance (Cies) @ Vce: 12.5nF @ 25V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module
Description

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The FD200R12PT4B6BOSA1 is a gallium nitride (GaN)-based power module designed to provide optimal performance in a wide range of applications. This device is designed to reduce system power consumption, increase power density, and improve system reliability. It is suitable for various applications in the industrial and automotive markets. This article will discuss the device’s application field and working principle.

Application Field

The FD200R12PT4B6BOSA1 is a 600 kHz, variable operating frequency power module designed to meet the requirements of demanding applications. It is ideal for automotive charger applications, LED lighting applications, electric motor drives, and home appliance motor applications. Its wide operational range, low gate charge, and very low switching losses make it suitable for high efficiency and power density operations.

This device is a general-purpose power module that is designed to reduce the need for external power tracking and thermal compensation to simplify system design and improve system reliability. It can operate at voltages ranging from GT20V to GT1200V and at current ranges from 15A to 100A. It also features fault isolation, current sensing and monitoring, and over-temperature protection.

Working Principle

The FD200R12PT4B6BOSA1 is an integrated power module consisting of a full bridge of Gallium Nitride (GaN)-based MOSFETs and a gate driver circuit. The device features a 3-level half-bridge topology, with a built-in current sense and control circuitry. The half-bridge topology is utilized for proper operation at output and is able to provide seamless transition between voltage and current mode control.

The device works by supplying a gate driving signal to the GaN power transistors. This gate driving signal is used to switch the GaN FETs between the on and off states. When the transistor switch is turned on, the output voltage is increased, while when it is turned off the output voltage is decreased. The device also incorporates a current sensing circuit to ensure that no overloads occur while the device operates optimally.

The FD200R12PT4B6BOSA1 also features a built-in temperature sensing and control circuitry to ensure the device does not overheat during operation. This circuitry triggers a warning, if the temperature exceeds a certain limit and will shut down the module in the event of an overload or thermal runaway condition.

The device features a 3-pin package with a low-voltage turn-on sequence, allowing for fast starts with minimal ripple and thereby reducing noise. The built-in adjustable gate drive and short circuit protection ensure maximum system efficiency and compliance with UL, CUL, and TUV safety requirements.

In summary, the FD200R12PT4B6BOSA1 is an optimized GaN-based power module suitable for a wide range of applications. It features a wide operational range, low gate charge, and very low switching losses, making it ideal for high efficiency, power density operations. It is also equipped with a 3-level half-bridge topology, adjustable gate drives, and temperature sensing and control circuitry for improved system reliability. This device enables system designers to reduce design complexities and increase system efficiency.

The specific data is subject to PDF, and the above content is for reference

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