Allicdata Part #: | FD300R06KE3HOSA1-ND |
Manufacturer Part#: |
FD300R06KE3HOSA1 |
Price: | $ 64.09 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT MODULE VCES 600V 300A |
More Detail: | IGBT Module Trench Field Stop Single 600V 400A 940... |
DataSheet: | FD300R06KE3HOSA1 Datasheet/PDF |
Quantity: | 1000 |
10 +: | $ 58.26430 |
Series: | -- |
Part Status: | Active |
IGBT Type: | Trench Field Stop |
Configuration: | Single |
Voltage - Collector Emitter Breakdown (Max): | 600V |
Current - Collector (Ic) (Max): | 400A |
Power - Max: | 940W |
Vce(on) (Max) @ Vge, Ic: | 1.9V @ 15V, 300A |
Current - Collector Cutoff (Max): | 5mA |
Input Capacitance (Cies) @ Vce: | 19nF @ 25V |
Input: | Standard |
NTC Thermistor: | No |
Operating Temperature: | -40°C ~ 150°C |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
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FD300R06KE3HOSA1 is a new type of transistor module, manufactured by Infineon Technologies. It is a Zero-Voltage soft-switching IGBT module, based on the latest technology available from the company. This module is typically used in applications requiring high efficiency, low power dissipation and robust switching operations, such as motor drives, UPS and other switch mode power supplies. This article will explain the application field and working principle of the FD300R06KE3HOSA1 in detail.
The FD300R06KE3HOSA1 module offers high performance and reliability compared to conventional power transistor modules. It utilizes the latest ld-packaged insulated gate bipolar transistors (IGBT) technology, which offers superior switching behavior and conduction losses. It has a rated current of 300A, voltage class of 600V and can handle operating frequency up to 10kHz. The IGBT module is also optimized for low EMI levels and has built-in protection features for over-voltage, over-current, short-circuit and temperature protection.
The modular technology of the FD300R06KE3HOSA1 enables its use in various applications. For example, this module is suitable for motor drives, pumps, solenoids and other motor-related applications due to its low switching losses and fast switching speeds. It can also be used in UPS and other switch mode power supplies, as its robust devices offer high reliability and repeatability. Furthermore, the high efficiency of the devices will minimize the size and weight of these applications, making them more compact and lightweight.
The working principle of the FD300R06KE3HOSA1 is based on the well-known principle of insulated gate bipolar transistor (IGBT). The IGBT is a three-terminal semiconductor device that performs similar to a notched MOSFET with a bipolar structure. In other words, it combines the low on-state voltage drop of a MOSFET and the control of the gate with the ruggedness of the bipolar transistor. The low gate voltage and charge of the IGBT enables its use in complex, wide-bandwidth systems, and its extended safe operating area (SOA) makes it highly reliable.
The FD300R06KE3HOSA1 module is based on the IGBT technology, and its specialized Zero-Voltage soft-switching (ZVSS) technique is a key component of the devices\' performance. This technique is used to reduce the switching losses, EMI levels and device stress, while maintaining a low voltage drop at full load. The ZVSS is based on the principle that a low-inductance current is applied to the load, allowing the IGBT to switch faster and more efficiently. The lower the switching losses, the higher the efficiency of the system.
To sum up, the FD300R06KE3HOSA1 Zero-Voltage soft-switching IGBT module offers improved performance and reliability compared to conventional power transistor modules. The module is typically used in applications requiring high efficiency, low power dissipation and robust switching operations, such as motor drives, pumps, solenoids, UPS and other switch mode power supplies. Its working principle is based on the well-known IGBT technology, and its specialized Zero-Voltage soft-switching (ZVSS) technique helps to reduce the switching losses, EMI levels and device stress, while maintaining a low voltage drop at full load.
The specific data is subject to PDF, and the above content is for reference
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