
Allicdata Part #: | FD300R12KS4HOSA1-ND |
Manufacturer Part#: |
FD300R12KS4HOSA1 |
Price: | $ 87.50 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT MODULE VCES 600V 300A |
More Detail: | IGBT Module Single Chopper 1200V 370A 1950W Chass... |
DataSheet: | ![]() |
Quantity: | 1000 |
10 +: | $ 79.54520 |
Series: | -- |
Part Status: | Active |
IGBT Type: | -- |
Configuration: | Single Chopper |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 370A |
Power - Max: | 1950W |
Vce(on) (Max) @ Vge, Ic: | 3.75V @ 15V, 300A |
Current - Collector Cutoff (Max): | 5mA |
Input Capacitance (Cies) @ Vce: | 20nF @ 25V |
Input: | Standard |
NTC Thermistor: | No |
Operating Temperature: | -40°C ~ 125°C |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
IGBTs (Insulated Gate Bipolar Transistors) are widely used in industrial and consumer devices due to their cost efficiency and relatively low on-state resistance. The FD300R12KS4HOSA1 IGBT is a great example of such a device. The module is primarily used in industrial applications such as motor controllers, utility applications, welding machines, and the like.
The FD300R12KS4HOSA1 IGBT module is composed of two parts; a control switch and a power MOSFET. The control switch consists of a pair of power FETs arranged in an Anti-Parallel configuration. The two FETs are connected in parallel but with their drain connections switched to ensure that one is always off when the other is on. The two FETs are then connected to the gate control of the IGBT, allowing the FETs to regulate the power to the IGBT.
The power MOSFET is connected in series with the control switch and the gate control of the IGBT. The MOSFET acts as a current-limiting device, preventing excessive currents from flowing through the IGBT and damaging it. The MOSFETs also regulate the voltages applied to the gate in order to maintain a consistent current throughout the device.
The FD300R12KS4HOSA1 IGBT module has a maximum current rating of 300A and a maximum di/dt of 100V/µs. It is designed to handle high power loads and has a low switching loss. As such, it is often used in motor control applications where power and efficiency are of utmost importance. It is also used in welding machines, DC drives, and many other industrial applications.
The working principle of the FD300R12KS4HOSA1 IGBT module is relatively simple. When a voltage is applied to the gate control of the module, it turns on the FETs in the control switch, allowing current to flow to the IGBT. The current is then regulated by the MOSFETs in conjunction with the control switch, ensuring an optimal amount of power is supplied to the IGBT.
Once the current is regulated, the IGBT begins to conduct. This causes a voltage drop between its drain and source terminals and a corresponding increase in current flow. The IGBT then amplifies this current, thus allowing it to be used in applications requiring high power.
The FD300R12KS4HOSA1 IGBT module is a reliable, cost-efficient, and efficient way to power industrial applications such as motor controllers, welders, and other power-intensive machinery. It is capable of handling high power loads and has a low switching loss. It also has a low on-state resistance which ensures maximum efficiency for the device.
The specific data is subject to PDF, and the above content is for reference
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