Allicdata Part #: | FD600R06ME3S2BOSA1-ND |
Manufacturer Part#: |
FD600R06ME3S2BOSA1 |
Price: | $ 107.76 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT MODULE VCES 600V 600A |
More Detail: | IGBT Module Trench Field Stop Single 600V 600A 225... |
DataSheet: | FD600R06ME3S2BOSA1 Datasheet/PDF |
Quantity: | 1000 |
10 +: | $ 97.96150 |
Series: | -- |
Part Status: | Active |
IGBT Type: | Trench Field Stop |
Configuration: | Single |
Voltage - Collector Emitter Breakdown (Max): | 600V |
Current - Collector (Ic) (Max): | 600A |
Power - Max: | 2250W |
Vce(on) (Max) @ Vge, Ic: | 1.6V @ 15V, 600A |
Current - Collector Cutoff (Max): | 400nA |
Input Capacitance (Cies) @ Vce: | 60nF @ 25V |
Input: | Standard |
NTC Thermistor: | Yes |
Operating Temperature: | -40°C ~ 125°C |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The FD600R06ME3S2BOSA1 is a common Insulated Gate Bipolar Transistor (IGBT) module. It is a very popular and reliable component in industrial, automotive, renewable energy, and consumer electronic applications.
An IGBT combines the advantages of both bipolar and MOSFET devices. It has a high input impedance like the MOSFET and high current gain like the bipolar transistor. The operating voltage range of the FD600R06ME3S2BOSA1 is 600V.
The typical application areas of the FD600R06ME3S2BOSA1 include motor controllers, lighting and general power control systems, and DC-DC converters. It is commonly used in switched-mode power supplies, solar micro-inverters, uninterruptible power supplies and multilevel converter systems.
The FD600R06ME3S2BOSA1 has a maximum continuous collector current of 600A, making it suitable for use with high-power applications. It also has an ON/OFF switching time of 18µs. This allows for faster switching, resulting in higher power efficiency and improved response times.
In order to understand the working principle of the FD600R06ME3S2BOSA1, we need to look at how the IGBT works in general. An IGBT consists of two junctions, usually referred to as the base and the collector. The base junction has two layers, one of which is the P-type layer and the other is the N-type layer.
When an voltage is applied to the base junction, electrons from the P-type layer are attracted to the N-type layer, causing them to flow through the base junction and creating an electric current. This current is then amplified at the collector junction, resulting in the IGBT turning on.
To turn the IGBT off, the voltage on the base junction needs to be reversed. This causes a depletion of electrons from the N-type layer, resulting in the IGBT to turn off.
The FD600R06ME3S2BOSA1 also includes an integrated fast freewheeling diode. This allows the IGBT to handle high amounts of current, as well as providing protection against inductive loads.
In summary, the FD600R06ME3S2BOSA1 is a common and reliable IGBT module for industrial, automotive, renewable energy and consumer electronic applications. It is suitable for applications requiring high-power and fast switching. The module also includes a fast freewheeling diode which allows the IGBT to handle high amounts of current and provides protection against inductive loads.
The specific data is subject to PDF, and the above content is for reference
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