FD600R17KE3B2NOSA1

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The FD600R17KE3B2NOSA1 is a part of the IGBT Modules classification within the larger family of transistors. This IGBT module is one of the most powerful yet compact in the FUJI lineup. Uniquely designed to provide robust power performance and reliable operation, the FD600R17KE3B2NOSA1 is capable of handling high-current applications that require a low forward voltage drop. Suitable for power switching applications, this part is particularly effective for motor control and other high-current applications.

Application Field

The FD600R17KE3B2NOSA1’s is suitable for applications that require high current and low forward voltage drop. The low forward voltage drop maintained by the module enables high efficiency and reduces power losses. In addition, due to its relatively low switching speed and its good noise characteristics, the FD600R17KE3B2NOSA1 is suitable for motor control applications. Due to its robust construction, the module can handle overvoltages up to 1200V, making it suitable for drives and other industrial applications.

Working Principle

This module uses an IGBT (Insulated-Gate Bipolar Transistor), which combines the best characteristics of both MOSFETs and BJTs. Put simply, an IGBT is a basically a power switch, where a small input signal can switch a large amount of current. It can do this efficiently because its internal structure eliminates the need for a large input gate current. Instead, it relies on charge carriers generated in the collector to switch the device on, and thereby allows for a much higher switching rate.

The FD600R17KE3B2NOSA1 uses a planar vertical IGBT structure and features antiparallel diodes for protection. This internal structure ensures that the module can handle overvoltages up to 1200V, and it eliminates the need for an external protective diode, thereby saving board space.

The gate of the IGBT controls the conduction of the module, and the gate of the module is controlled by an external control voltage. When a control voltage is applied, it changes the minority carrier concentration in the IGBT channel region, which allows current to flow across the collector and its drain. The FD600R17KE3B2NOSA1 also features software-controlled choice of on/off states. As a result, it can be used both in a high-side configuration as well as in a low-side configuration.

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