![FDG1024NZ Allicdata Electronics](https://files.allicdata.com/upload/common/default.jpg)
Allicdata Part #: | FDG1024NZFSTR-ND |
Manufacturer Part#: |
FDG1024NZ |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET 2N-CH 20V 1.2A SC70-6 |
More Detail: | Mosfet Array 2 N-Channel (Dual) 20V 1.2A 300mW Sur... |
DataSheet: | ![]() |
Quantity: | 9000 |
Series: | PowerTrench® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 1.2A |
Rds On (Max) @ Id, Vgs: | 175 mOhm @ 1.2A, 4.5V |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 2.6nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 150pF @ 10V |
Power - Max: | 300mW |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: | SC-70-6 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The FDG1024NZ is an integrated type N-FET array. It is a four-channel device consisting of four independent FETs that function as voltage driven switches with Source and Drain connections. These FETs are manufactured on linear perimetric processes, which make them suitable for use in high-speed, high density applications. It provides an excellent balance between performance, power dissipation and cost.
The FDG1024NZ\'s application field mainly includes high-speed switching of analog and digital signals, as well as high-density logic-level gate circuits and high-speed memory interface. This device is suitable for high-current switching in power supplies, audio amplifiers, and industrial process controls. It can be utilized in many situations where high performance and cost sensitivity are of utmost importance. Additionally, the FDG1024NZ is also used in applications such as the automotive infotainment and powertrain systems.
The FDG1024NZ\'s working principle is based on the well-known P-FET and N-FET technology. FETs are three-terminal devices composed of a semiconductor material with a thin layer of active material between the Gate and Source connections. Depending on the type of FET, this active material can be either N or P type silicon. In the FDG1024NZ, N-FETs are used in order to switch large currents that require thicker base connections. The Gate connection of the FET acts like a capacitor and is used to regulate the flow of current between the Source and Drain connections. When a positive voltage is applied to the Gate connection, the N-FET opens up and allows current to flow between the Source and Drain connections.
The FDG1024NZ array is constructed in a compact 4-pin DIP package in order to provide increased power and cost efficiency. The device is powered by a single +5V supply, and features low RDSon value of 6 ohms. This low power device is designed to minimize power dissipation while providing excellent performance. The FDG1024NZ is also designed with anti-punchthrough protection to ensure reliable operation. Additionally, the device is RoHS compliant.
The FDG1024NZ is an ideal solution for applications such as automotive infotainment and powertrain systems. This device offers a low cost per unit while providing excellent performance. It is also versatile, offering a wide range of uses, such as high speed switching, digital logic level gate circuits, and memory interface applications. Additionally, the FDG1024NZ is RoHS compliant and features anti-punchthrough protection for reliable operation.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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FDG1024NZ | ON Semicondu... | -- | 9000 | MOSFET 2N-CH 20V 1.2A SC7... |
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