FDG8850NZ Allicdata Electronics
Allicdata Part #:

FDG8850NZTR-ND

Manufacturer Part#:

FDG8850NZ

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET 2N-CH 30V 0.75A SC70-6
More Detail: Mosfet Array 2 N-Channel (Dual) 30V 750mA 300mW Su...
DataSheet: FDG8850NZ datasheetFDG8850NZ Datasheet/PDF
Quantity: 6000
Stock 6000Can Ship Immediately
Specifications
Series: PowerTrench®
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 750mA
Rds On (Max) @ Id, Vgs: 400 mOhm @ 750mA, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.44nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 10V
Power - Max: 300mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6
Description

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Introduction: The FDG8850NZ is an integrated array of low-voltage field effect transistors (FETs), and is used in many different electronic devices and applications.

Application Field: The most common application of the FDG8850NZ is as a low power amplifier. It is ideal for amplifying signal strength in applications like radio frequency (RF) communications and test instruments. It is also commonly used to signal amplifying and mixing, or Asynchronous Interrupt Circuits (ASICs).

FET Structure: Transistors are comprised of three parts: the source, gate, and drain. The FDG8850NZ is made from multiple transistors and is designed to perform more complicated control and amplification tasks. The components of the transistor array are connected in a modified Darlington configuration, so that each transistor has its own separate drain.

Form Factors: The FDT8850NZ comes in four different form factors, including Compact Quad Packs (QFP), Dual Flat Packs (DFP), flat packs (FP), and Dual Flat Pack Array (DPA).

Input/Output Characteristics: The input characteristics of the FDG8850NZ include a supply voltage range of 3.3V to 5.5V, a maximum input signal of 1.3V and a current draw of 0.5A. The output characteristics of the FDG8850NZ include a maximum output voltage of 20V, a voltage gain of 80dB and a frequency response of up to 1MHz.

Working Principle of FET: The FDG8850NZ works by amplifying incoming signals and allowing current to be controlled and divided at various switch points around the transistor. When a signal is applied to the gate, charge is “stored” in the gate, and this then allows current to flow between the source and drain of the transistor. This is known as the “field effect” of transistors.

Conclusion: The FDG8850NZ is a highly versatile integrated array of low-voltage field effect transistors, and is used to perform many different tasks, including signal amplification and mixing, or ASICs. With its wide range of input and output characteristics, the FDG8850NZ is a popular and widely used choice for many electronic applications.

The specific data is subject to PDF, and the above content is for reference

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