FDJ1027P

Power - Max:	900mW
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SC75-6 FLMP
Supplier Device Package:	SC75-6 FLMP
Series:	PowerTrench®
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
FET Type:	2 P-Channel (Dual)
FET Feature:	Logic Level Gate
Drain to Source Voltage (Vdss):	20V
Current - Continuous Drain (Id) @ 25°C:	2.8A
Rds On (Max) @ Id, Vgs:	160 mOhm @ 2.8A, 4.5V
Vgs(th) (Max) @ Id:	1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:	290pF @ 10V

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction

The FDJ1027P is a type of negative-gate-source MOSFET array. It contains four complementary symmetrical N-channel and P-channel enhancement type MOSFETs arranged in a common-source configuration. The FDJ1027P arrays features low on-resistance, fast switching and low input capacitance. This makes it ideal for use in logic level switching, digital logic interface and line driver applications.

Structure and Features

The FDJ1027P MOSFET array is available in a SOIC-8 package. It contains four N-channel and four P-channel MOSFETs, each with its own gate, drain and source lines. Each of the MOSFETs has an on-resistance of just 9.5 Ω, making it ideal for high speed switching applications. It also has a low input capacitance of 20 pF. This makes it suitable for use in high speed digital logic applications. The device also has a maximum drain to source voltage of N/P type 60V and a maximum drain current at T=25°C of 8 A.The device also has a maximum junction temperature of Tj=175°C and a maximum power dissipation of Pd=400mW. It also features an ESD capability of ≥6KV.

Working Principle

The FDJ1027P is a type of negative-gate-source MOSFET array. This means that the gate voltage is negative with respect to the source. This means that the FET will be off when the gate to source voltage is negative. The logic of the device is that the gate voltage is used to turn the FETs on/off. To turn the FETs off, the gate voltage is lowered to a negative level with relation to the source voltage. Conversely, the FETs are turned on when the gate voltage is positive relative to the source voltage.

Applications

The FDJ1027P is suitable for use in a variety of applications including logic level switching, digital logic interface and line driver applications. It can also be used in motor control, power amplifier, audio power amplifiers and general purpose switching applications.

Conclusion

The FDJ1027P is a negative-gate-source MOSFET array. It contains four N-channel and four P-channel MOSFETs, each with its own gate, drain and source lines. It features low on-resistance, fast switching and low input capacitance making it suitable for use in logic level switching, digital logic interface and line driver applications. The device has a maximum drain to source voltage of N/P type of 60V and a maximum drain current at T=25°C of 8 A. This makes it ideal for use in high speed digital and switching applications.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description