FDMJ1032C

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FDMJ1032C is a field effect transistor array that is used for applications requiring high performance analog switching with low power consumption. This FET array is a complementary output with built-in source resistors for improved noise immunity. The package of FDMJ1032C includes two n-channel and two p-channel enhancement mode MOSFETs. It features dual gate logic compatible drivers and drain-drain short circuit protection. The FDMJ1032C is designed to provide a high degree of frequency stability, low on-resistance, self-limiting peak current, and a good current handling capability.

The FDMJ1032C is commonly used in broadcast audio and video applications, routers and conduction equipment, high performance analog transmission and motor control. It is suitable for use in a variety of circuits such as audio amplifiers, video switching, audio switching, and horn drivers.

The working principle of FDMJ1032C is based on classical MOSFET technology. It consists of four enhancement MOSFETs in an array form. The two n-channel transistors are on the left side and the two p-channel transistors are on the right side. The two gates of each transistor are connected together, forming a “gate-gate” Structure. When the input voltage is applied to the gate, the gate-drain capacitance can be adjusted to control the gate-drain voltage and drive the two channels of transistors. The two gate pins are also connected to CMOS logic compatible interfaces. This ensures that FDMJ1032C is suitable for use with a wide range of ICs.

The FDMJ1032C is a versatile device that offers lower on-resistance, improved noise immunity, and a wide range of operating frequencies. Its wide common-mode and supply voltage range makes it ideal for applications ranging from low voltage to high voltage operation. It also features low power dissipation, improved power efficiency, self-limiting peak current and high current handling capability. Moreover, the FDMJ1032C is equipped with a source resistance to increase the gate-source resistance for improved noise immunity.

In summary, FDMJ1032C is a high performance field effect transistor array designed to be used in applications requiring high performance analog switching with low power consumption. It is composed of two n-channel and two p-channel enhancement mode MOSFETs and is equipped with CMOS logic compatible drivers, drain-drain short circuit protection, and a source resistance for improved noise immunity. The built-in source resistor also helps to maximize efficiency and reduce current dissipation. The FDMJ1032C is suitable for use in a variety of circuits, including audio and video switching, horn drivers, audio amplifiers, and motor control.

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