
Allicdata Part #: | FDQ7698S-ND |
Manufacturer Part#: |
FDQ7698S |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET 2N-CH 30V 12A/15A 14SOIC |
More Detail: | Mosfet Array 2 N-Channel (Dual) 30V 12A, 15A 1.1W,... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | PowerTrench® |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 12A, 15A |
Rds On (Max) @ Id, Vgs: | 7.5 mOhm @ 15A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 17nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds: | 1324pF @ 15V |
Power - Max: | 1.1W, 1.3W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 14-SOIC (0.154", 3.90mm Width), 11 Leads, Fused Leads |
Supplier Device Package: | 14-SO |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
FDQ7698S Application Field and Working Principle
FETs (Field Effect Transistors) are one of the most important components in modern-day electronics and are used to produce a high-quality output. The FDQ7698S is a type of FET with two gates and four contacts. This specific device is designed for use as a logic-level MOSFET.
MOSFETs (Metal Oxide Semiconductor Field-Effect Transistors) are a type of FET where the gate is insulated from the rest of the device. The key advantages of the FDQ7698S device are its low input resistance, threshold voltage, low input voltage and low output current.
Application Field
The FDQ7698S is mostly used for power switching in a wide array of fields which includes medical equipment, robotics, automotive systems, aerospace, consumer electronics, and even in microelectronic devices.
In medical equipment, the FDQ7698S provides low resistance and high frequency operation which helps in producing accurate signals and responses. In automotive systems, the FDQ7698S provides leak-free operation in order to allow for a safe and reliable drive and to prevent any unexpected operating failures.
In consumer electronics, the FDQ7698S can be found in television, phones, and game consoles. Its low input resistance and threshold voltage allow for better energy-saving features and provide more accurate outputs. In aerospace engineering, the FDQ7698S is used to design components and circuits to safely send signals and data in order to ensure the safety of the crew, passengers, and the aircraft itself.
Working Principle
The FDQ7698S is a MOSFET and works in the same way that a standard MOSFET does. The device operates on the principle of charge control. When the gate voltage is applied, it creates a capacitive effect, which is used to control the current flow between the source and the drain.
When the gate voltage is set to a high voltage, electrons are attracted to the gate which causes them to move away from the source and towards the drain. This causes a higher current to flow through the device, thereby increasing its power output.
When the gate voltage is set to a low voltage, electrons are repelled by the gate, causing them to move back to the source and reduce the current flow. This reduces the power output of the device. The FDQ7698S device also works as an array, allowing for multiple connections of the device to be made. This allows for a relatively high power output compared to traditional MOSFETs.
Conclusion
The FDQ7698S is a powerful MOSFET device that is used for a wide variety of applications. It has a low input resistance, threshold voltage and a low input voltage which allows for efficient energy-saving properties. The device is also used to produce an array of connections, and is extensively used in medical equipment, robotics, automotive systems, aerospace engineering and consumer electronics. The FDQ7698S operates on the principle of charge control, whereby electrons are attracted or repelled by the gate voltage.
The specific data is subject to PDF, and the above content is for reference
MOSFET 2N-CH 30V 8AMosfet Array 2 N-Chan...

MOSFET 2N-CH 40V 6A 8PWRPAKMosfet Array ...

MOSFET 2P-CH 30V 5.8A 8SOICMosfet Array ...

MOSFET 2N-CH 80V 1.1A 8SOICMosfet Array ...

MOSFET 2N-CH 56LFPAKMosfet Array

MOSFET 2N-CH 30V 8SOICMosfet Array 2 N-C...
