FDY1002PZ Allicdata Electronics
Allicdata Part #:

FDY1002PZTR-ND

Manufacturer Part#:

FDY1002PZ

Price: $ 0.10
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET 2P-CH 20V 0.83A SC89-6
More Detail: Mosfet Array 2 P-Channel (Dual) 20V 830mA 446mW Su...
DataSheet: FDY1002PZ datasheetFDY1002PZ Datasheet/PDF
Quantity: 12000
1 +: $ 0.09600
10 +: $ 0.09312
100 +: $ 0.09120
1000 +: $ 0.08928
10000 +: $ 0.08640
Stock 12000Can Ship Immediately
$ 0.1
Specifications
Series: PowerTrench®
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 830mA
Rds On (Max) @ Id, Vgs: 500 mOhm @ 830mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 10V
Power - Max: 446mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SC-89-6
Description

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FDY1002PZ Application Field and Working Principle

The FDY1002PZ is an N-channel low-on-resistance (low RDS(on)) dual transistor array manufactured by FDY Semiconductor Co. Ltd., a leading producer of power MOSFETs used in power management systems. The FDY1002PZ consists of two high-current transistors connected in parallel, allowing it to provide higher switch currents than a single transistor device. It is available in a surface mount package (SMD) and can be used in both high-frequency applications and in battery-powered or portable devices.

Types of FDY1002PZ

The FDY1002PZ is available in two versions: P and N type. The “P” version is a positive gate-controlled power device and the “N” version is a negative gate-controlled power device. Both types feature low RDS(on) and are capable of fast switching speeds.

Applications

The FDY1002PZ can be used in a variety of applications, including motor control systems, motor inverters, solar inverters, DC-DC converters, high-frequency inductors, appliance control systems, and UPS systems. It is particularly well suited for applications requiring the highest currents and where fast switching speed and high efficiency are important.

Working Principle

The FDY1002PZ is a dual transistor array, which means it contains two transistors connected in parallel. Each transistor has three pins: the source, the gate, and the drain. When a positive voltage is applied to the gate, the transistor is turned on and current flows from the source to the drain. If a negative voltage is applied, the transistor is turned off and the current stops flowing. This switching process is what generates the fast switching speeds of the FDY1002PZ.

Since the FDY1002PZ consists of two transistors connected in parallel, it can provide higher switching currents than a single transistor device. Additionally, the low RDS(on) makes it very efficient. In summary, the FDY1002PZ is an ideal device for applications requiring high currents and fast switching speeds.

The specific data is subject to PDF, and the above content is for reference

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