FERD30H100SB-TR Allicdata Electronics

FERD30H100SB-TR Discrete Semiconductor Products

Allicdata Part #:

497-16950-2-ND

Manufacturer Part#:

FERD30H100SB-TR

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: DIODE RECT 100V 30A DPAK
More Detail: Diode FERD (Field Effect Rectifier Diode) 100V 30A...
DataSheet: FERD30H100SB-TR datasheetFERD30H100SB-TR Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: FERD (Field Effect Rectifier Diode)
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 30A
Speed: Fast Recovery = 200mA (Io)
Capacitance @ Vr, F: --
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Operating Temperature - Junction: 175°C (Max)
Description

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Diodes - Rectifiers - Single

A single rectifier diode, such as the FERD30H100SB-TR, is a semiconductor device designed for the purpose of rectifying a voltage. As in the general case for a diode, it will allow electrical current to move through it in only one direction. This means that the anode of the diode is the positive terminal, while the cathode of the diode will accept the negative electrical charges.

Electrical power must be rectified to be used in most electrical circuits. The FERD30H100SB-TR is an ideal device for this purpose. It is able to efficiently, and reliably, convert alternating current (AC) to direct current (DC). Furthermore, the FERD30H100SB-TR can handle large amounts of power and is able to withstand surge currents.

Semiconductor Structure

The FERD30H100SB-TR uses a silicon junction for the rectification. This means that it is made from semiconductors, such as silicon, germanium, or gallium arsenide. It is formed from two p-type and two n-type regions. The n-type regions are responsible for diffusing excess electrons and allowing the anode to create a space charge layer. The p-type regions contribute positively charged holes in the lattice, and both regions are responsible for forming a depletion layer. The depletion layer restricts the movement of the electrons and the holes to either side of the junction, and this is how the current is only able to pass in one direction.

Working Principle

When AC voltage is applied on the FERD30H100SB-TR, one of the two p-type and n-type regions is forward biased. This allows the current to flow in one direction as the electrons are able to move freely in this particular direction. This process is then repeated as the AC voltage alternates between its positive and negative values. The cathode of the diode then acts as an anode, and the current is able to pass through it in the opposite direction. This repeated cycle of the diode switching between forward biased and reverse biased is what allows it to rectify the voltage so that it is usable in an electrical circuit.

Application field

The FERD30H100SB-TR and similar single rectifier diode formats are commonly found in power supplies, high-efficiency motor controllers, power converters, power inverters, and other similar applications. At the most basic level, the FERD30H100SB-TR can provide rectified power to certain AC appliances, such as lighting, heating elements, and motors. In some cases, the FERD30H100SB-TR can also act as a level detector to protect an electronic device from the effects of overvoltage. All in all, the FERD30H100SB-TR is a versatile and efficient diode that can be used in many industries and applications.

The specific data is subject to PDF, and the above content is for reference

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