
Allicdata Part #: | FES16GT-E3/45-ND |
Manufacturer Part#: |
FES16GT-E3/45 |
Price: | $ 0.95 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 400V 16A TO220AC |
More Detail: | Diode Standard 400V 16A Through Hole TO-220AC |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | $ 0.95000 |
10 +: | $ 0.92150 |
100 +: | $ 0.90250 |
1000 +: | $ 0.88350 |
10000 +: | $ 0.85500 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 400V |
Current - Average Rectified (Io): | 16A |
Voltage - Forward (Vf) (Max) @ If: | 1.3V @ 16A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 50ns |
Current - Reverse Leakage @ Vr: | 10µA @ 400V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Through Hole |
Package / Case: | TO-220-2 |
Supplier Device Package: | TO-220AC |
Operating Temperature - Junction: | -65°C ~ 150°C |
Base Part Number: | FES16G |
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The FES16GT-E3/45 is a rectifier diode from the single class. It is widely used in a variety of applications owing to its robust design. Generally, the device operates at a high voltage, with a power output of up to 45 watts. Thus, the device is ideal for use in environments that demand high efficiency and power.
The device consists of two electrodes, anode and cathode, as well as a dielectric layer. The anode acts as the input and the cathode acts as the output. The majority carrier is a hole, while the minority carrier is an electron. When current passes through, the holes in the anode fill the holes left by the electrons in the cathode.
The main application for the device is for rectification. It is used to convert alternating current (AC) into direct current (DC). The device operates in a manner which allows current to pass in one direction, while blocking current in the opposite direction. This type of rectification is necessary for the operation of electrical circuits. Other rectification applications include signal modulation and mixing, as well as power supplies.
The device can also be used as a switch. The device can be triggered to switch between two states, either on or off, by applying a voltage or current to the device. This is a powerful tool in electrical engineering, as it allows the user to easily control the power output of a circuit. It is commonly used in motor control and error detection systems.
In terms of its design and construction, the FES16GT-E3/45 has a rugged construction which allows the device to operate in harsh working conditions. The device is ideal for high temperature operation and has an operating temperature range from -40°C to +150°C. The device has a high power density, allowing for greater efficiency and more power output with less weight.
The device also features a low forward voltage drop (Vf). When a high current is passed through the device, it still maintains a low voltage drop. This is due to the high current rating of the device, which enables it to handle higher power loads.
Another benefit of the FES16GT-E3/45 is that it has a low reverse recovery time (trr). This is important for a device where fast switching times are critical. Low trr is a vital factor to consider when selecting a component for high-frequency circuits.
Finally, the device uses Schottky barrier technology, which ensures that the device has a higher efficiency than other conventional rectifier diodes. This higher efficiency is due to the lower forward voltage drop and lower reverse recovery time.
In summary, the FES16GT-E3/45 is a powerful rectifier diode from the single class. It is well suited for applications which demand high efficiency, power and rugged construction. The device features a low forward voltage drop, low trr and Schottky barrier technology, which makes it ideal for high-performance applications. The device can also be used as a switch, making it an essential component for a variety of electronic circuits.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
FES16HTHE3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 500V 16A T... |
FES16BTHE3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 100V 16A T... |
FES10D | ON Semicondu... | 0.27 $ | 1000 | 10A 200V ULTRA FAST RECTI... |
FES16HT-E3/45 | Vishay Semic... | 0.95 $ | 1000 | DIODE GEN PURP 500V 16A T... |
FES16GT | ON Semicondu... | -- | 1000 | DIODE GEN PURP 400V 16A T... |
FES16JT-E3/45 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 600V 16A T... |
FES16GTHE3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 16A T... |
FES16JTR | ON Semicondu... | -- | 1000 | DIODE GEN PURP 600V 16A T... |
FES16GT-E3/45 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 400V 16A T... |
FES16JT-9HE3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE ARRAY GP TO220ACDio... |
FES16BT-E3/45 | Vishay Semic... | 1.06 $ | 197 | DIODE GEN PURP 100V 16A T... |
FES16BT | ON Semicondu... | -- | 1000 | DIODE GEN PURP 100V 16A T... |
FES16HTR | ON Semicondu... | 0.0 $ | 1000 | DIODE GEN PURP 500V 16A T... |
FES16ATHE3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 50V 16A TO... |
FES16BTR | ON Semicondu... | 0.0 $ | 1000 | DIODE GEN PURP 100V 16A T... |
FES16GTR | ON Semicondu... | 0.0 $ | 1000 | DIODE GEN PURP 400V 16A T... |
FES16FT-E3/45 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 300V 16A T... |
FES16JT-5410HE3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE ARRAY GP TO220ACDio... |
FES16CTHE3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 150V 16A T... |
FES16DT-E3/45 | Vishay Semic... | -- | 1000 | DIODE GEN PURP 200V 16A T... |
FES16CT-23HE3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE ARRAY GP TO220ACDio... |
FES16FTR | ON Semicondu... | 0.0 $ | 1000 | DIODE GEN PURP 300V 16A T... |
FES16FTHE3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 300V 16A T... |
FES16CT-E3/45 | Vishay Semic... | 0.45 $ | 1000 | DIODE GEN PURP 150V 16A T... |
FES10J | ON Semicondu... | 0.27 $ | 1000 | 10A 600V ULTRA FAST RECTI... |
FES10G | ON Semicondu... | 0.27 $ | 1000 | 10A 400V ULTRA FAST RECTI... |
FES16ATR | ON Semicondu... | 0.0 $ | 1000 | DIODE GEN PURP 50V 16A TO... |
FES16HT | ON Semicondu... | -- | 1000 | DIODE GEN PURP 500V 16A T... |
FES16AT | ON Semicondu... | -- | 1000 | DIODE GEN PURP 50V 16A TO... |
FES16JT | ON Semicondu... | 0.0 $ | 1000 | DIODE GEN PURP 600V 16A T... |
FES16DTHE3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 200V 16A T... |
FES16JTHE3/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 16A T... |
FES16CTR | ON Semicondu... | 0.0 $ | 1000 | DIODE GEN PURP 150V 16A T... |
FES16FT | ON Semicondu... | -- | 1000 | DIODE GEN PURP 300V 16A T... |
FES16AT-E3/45 | Vishay Semic... | 0.39 $ | 1000 | DIODE GEN PURP 50V 16A TO... |
FES16CT | ON Semicondu... | -- | 1000 | DIODE GEN PURP 150V 16A T... |
FES16DTR | ON Semicondu... | -- | 1000 | DIODE GEN PURP 200V 16A T... |
FES16GT/45 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 16A T... |
FES16DT | ON Semicondu... | -- | 1000 | DIODE GEN PURP 200V 16A T... |
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