FF1200R12IE5PBPSA1

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Transistors - IGBTs - Modules

The FF1200R12IE5PBPSA1 is a high voltage Diode Modules IGBT (Insulated Gate Bipolar Transistor) designed by TOSHIBA which plays a significant role in automotive applications, factory automation and induction heating. This type of transistor improves switching speeds, reduces the required voltage and maintains high power efficiency. Its application field extends to welding machines, plasma cutters, motor drives, elevators, energy systems and hybrids, among others.

The FF1200R12IE5PBPSA1 is part of the tPOWER-BD family of transistors, which are fully optimized for low conduction losses, low output capacitance and maximum current capacity. The integrated hybrid diode is a new technology that enables a short reverse recovery time and a low forward voltage drop. This IGBT Module has an insulated base, lower switching losses and a high temperature operation.

The FF1200R12IE5PBPSA1 has a maximum collector current of 1200A with a collector-emitter voltage of 1200V. It also has a gate-emitter voltage of 12V and a maximum VCE(sat) value of 2.8V at 150A. In addition, the FF1200R12IE5PBPSA1 has a trench gate process which ensures low conduction losses, fast switching speed, good temperature stability and it offers excellent noise immunity.

Working Principle

The FF1200R12IE5PBPSA1 is an insulated gate bipolar transistor (IGBT) module. It includes a compact hybrid diode and low conduction losses. The hybrid diode reduces leakage current and the output capacitance and provides a consistent switching behaviour. The main component of this IGBT Module is the insulated gate which acts as a switch between the collector and the emitter. When the current flows from the collector to the emitter, the voltage between the collector and the emitter becomes large enough to turn on the gate, allowing the current to flow. As a result, the switch is on and the transistor is in the on state.

When the current is flowing in the opposite direction, the voltage between the collector and the emitter drops to zero, turning off the gate. This action causes the transistor to enter the off state. In order to maintain a low VCE(sat) value, the IGBT has a trench gate process that ensures low conduction losses and fast switching speeds. This process also ensures that the module has excellent noise immunity. This IGBT Module also has a high temperature operation which is beneficial in high-power applications.

Conclusion

The FF1200R12IE5PBPSA1 is a high voltage Diode Modules IGBT. It has a maximum collector current of 1200A and a collector-emitter voltage of 1200V. The FF1200R12IE5PBPSA1 has a trench gate process which ensures low conduction losses and fast switching speeds. It also has an integrated hybrid diode which offers a short reverse recovery time and a low forward voltage drop. This IGBT Module has a high temperature operation, low switching losses and excellent noise immunity, making it an ideal choice for high-power applications.

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