Allicdata Part #: | FF1200R17KE3NOSA1-ND |
Manufacturer Part#: |
FF1200R17KE3NOSA1 |
Price: | $ 0.69 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT MODULE VCES 1200V 1200A |
More Detail: | IGBT Module Single Chopper 1700V 595000W Chassis... |
DataSheet: | FF1200R17KE3NOSA1 Datasheet/PDF |
Quantity: | 1000 |
2 +: | $ 0.63000 |
Series: | -- |
Part Status: | Active |
IGBT Type: | -- |
Configuration: | Single Chopper |
Voltage - Collector Emitter Breakdown (Max): | 1700V |
Power - Max: | 595000W |
Vce(on) (Max) @ Vge, Ic: | 2.45V @ 15V, 1200A |
Current - Collector Cutoff (Max): | 5mA |
Input Capacitance (Cies) @ Vce: | 110nF @ 25V |
Input: | Standard |
NTC Thermistor: | No |
Operating Temperature: | -40°C ~ 125°C |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
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FF1200R17KE3NOSA1 is a unique type of transistor module that offers a wide array of applications in many different areas. This type of module is an insulated gate bipolar transistor (IGBT) module that is manufactured using advanced technology from Fairchild Semiconductor. It is designed for use in a variety of different applications, including automotive, industrial, consumer, and communications applications. In addition to its versatile design and wide application fields, FF1200R17KE3NOSA1 also offers superior performance and reliability.
The combination of an insulated gate bipolar transistor (IGBT) and a diode bridge in one module gives FF1200R17KE3NOSA1 its unique properties. IGBTs are unidirectional switches which can control the flow of both AC and DC current. They are characterized by low on-state losses, fast switching speed, and low drive power. The integrated diode bridge makes FF1200R17KE3NOSA1 highly efficient and lies it as an excellent choice for applications where cost and performance are important.
FF1200R17KE3NOSA1 has a wide range of application fields, such as automotive, consumer, industrial, and power industries. In the automotive industry, IGBTs are widely used for ignition control and drivetrain applications. They are also used to regulate voltage and current in the consumer electronic devices, and can be found in home appliances, computers, and other electronic devices. Industrial applications include switching, welding, and motor drive systems. Additionally, power industries rely on IGBTs for power inverter and converter designs.
The working principles of FF1200R17KE3NOSA1 are quite straightforward. It is essentially composed of two elements – the basic IGBT and a built-in diode bridge. When power is applied to the module, the IGBT turns on and provides a low resistance path for current to flow. This current flow can either be a direct current (DC) or an alternating current (AC). The diode bridge allows the current flow to easily switch directions, which provides a great advantage in some applications. Moreover, the IGBT is capable of quickly switching between the on and off state, which is important for applications that require a rapid response time.
FF1200R17KE3NOSA1 module from Fairchild Semiconductor provides superior performance, reliability, and flexibility for many applications. Its wide range of application fields and efficient working principles make it an ideal choice for automotive, industrial, consumer and power industries. With its competitive price, advanced technologies, and wide application range, it is clear why FF1200R17KE3NOSA1 has become such a popular choice for many applications.
The specific data is subject to PDF, and the above content is for reference
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