Allicdata Part #: | FF1200R17KE3B2NOSA1-ND |
Manufacturer Part#: |
FF1200R17KE3B2NOSA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT MODULE 1700V 1200A |
More Detail: | IGBT Module |
DataSheet: | FF1200R17KE3B2NOSA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | * |
Part Status: | Obsolete |
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Transistors
IGBTs
Modules
FF1200R17KE3B2NOSA1 application field and working principle
FF1200R17KE3B2NOSA1 is an IGBT module developed, manufactured and tested by Fuji Electric. This product has characteristics such as high reliability and strong noise immunity, and it is especially suitable for applications with high speed, high accuracy and high control accuracy. In this paper, we will introduce the application field and working principle of FF1200R17KE3B2NOSA1.
ApplicationField
FF1200R17KE3B2NOSA1 is suitable for various variable frequency drive, inverter, high power switching or other applications like servo motors, suppression circuits, protection circuits, soft starters, energy harvesting, etc. It is suitable for diverse operating conditions such as high speed, high temperature and vibration.
WorkingPrinciple
FF1200R17KE3B2NOSA1 uses the effect of magnetism to generate negative resistance. When a current passes through the electrical coils, an electric field is generated. This electric field then generates a magnetic field, and the magnetic field interacts with the electrical field to create an opposing electromagnetic force. This produces a negative resistance in the circuit, meaning that the current flow is decreased.
When a voltage is applied to the gate terminal, the current enters into the transistor gate, which then activates the transistor to start conducting. The gate current is relatively small compared to the collector-emitter current, but it is enough to turn on the transistor. The created negative resistance works together with the gate current to control the collector-emitter current. The greater the gate current, the greater the negative resistance, and so the less current flows through the collector-emitter.
The FF1200R17KE3B2NOSA1 utilizes the gate current and negative resistance effect to control the collector-emitter current. By adjusting the gate current and the negative resistance, the collector-emitter current can be precisely adjusted, thus providing a high-accuracy switching and control.
The specific data is subject to PDF, and the above content is for reference
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