Allicdata Part #: | FF150R12KS4HOSA1-ND |
Manufacturer Part#: |
FF150R12KS4HOSA1 |
Price: | $ 69.44 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT MODULE VCES 1200V 150A |
More Detail: | IGBT Module 2 Independent 1200V 225A 1250W Chassi... |
DataSheet: | FF150R12KS4HOSA1 Datasheet/PDF |
Quantity: | 1000 |
10 +: | $ 63.12730 |
Series: | -- |
Part Status: | Active |
IGBT Type: | -- |
Configuration: | 2 Independent |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 225A |
Power - Max: | 1250W |
Vce(on) (Max) @ Vge, Ic: | 3.7V @ 15V, 150A |
Current - Collector Cutoff (Max): | 5mA |
Input Capacitance (Cies) @ Vce: | 11nF @ 25V |
Input: | Standard |
NTC Thermistor: | No |
Operating Temperature: | -40°C ~ 125°C |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
FF150R12KS4HOSA1 is a type of Insulated Gate Bipolar Transistor (IGBT) module, used in applications where high power, high current, and high frequency are essential.
It is a three-phase module composed of three IGBT chips in parallel connection, each having a maximum voltage rating of 1200V, DC current rating of 150A, and a gate charge of 1100nC/chip. This device is a combination of a power transistor and an insulated gate field-effect transistor, forming an efficient and reliable power switching module.
The insulated gate prevents unwanted transistor action between electrodes, effectively isolating the gate from the current-carrying electrodes. This feature makes it ideal for high-power applications, such as motor drives, solar converters, and UPS systems.
The module provides high-frequency switching performance, making it suitable for applications such as frequency converters and high-speed switches. It has built-in short-circuit protection, which allows the module to automatically recover from short-circuits, ensuring safe operation of your system.
The FF150R12KS4HOSA1 can be used in a wide range of applications, including motor controllers, electric vehicles, AC drives, and renewable energy systems. Its superior efficiency and low-power losses make it suitable for these and other applications.
The working principle of the FF150R12KS4HOSA1 is based on the basic principles of IGBT technology. When the gate is open, the current flow is blocked, preventing the flow of current from source to drain. When the gate is closed, the current can flow from source to drain. The voltage applied to the gate has to be greater than the source voltage for the current to flow, otherwise it remains blocked.
Moreover, when the gate is open, the drain-source voltage is essentially zero, meaning that voltage has no influence on the device. The most unique characteristic of the FF150R12KS4HOSA1 is its high-speed capability, where the module is capable of switching between on and off states within milliseconds.
In short, the FF150R12KS4HOSA1 is a versatile power switching module, suitable for a wide range of high-power applications. It is reliable and efficient, with built-in short-circuit protection and high-speed switching capabilities. The device is well suited for applications such as motor controllers, electric vehicles, AC drives, and renewable energy systems.
The specific data is subject to PDF, and the above content is for reference
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