Allicdata Part #: | FF150R12KT3GHOSA1-ND |
Manufacturer Part#: |
FF150R12KT3GHOSA1 |
Price: | $ 63.22 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT MODULE VCES 1200V 150A |
More Detail: | IGBT Module Trench Field Stop Single Chopper 1200V... |
DataSheet: | FF150R12KT3GHOSA1 Datasheet/PDF |
Quantity: | 1000 |
10 +: | $ 57.48180 |
Series: | -- |
Part Status: | Active |
IGBT Type: | Trench Field Stop |
Configuration: | Single Chopper |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 225A |
Power - Max: | 780W |
Vce(on) (Max) @ Vge, Ic: | 2.15V @ 15V, 150A |
Current - Collector Cutoff (Max): | 5mA |
Input Capacitance (Cies) @ Vce: | 11nF @ 25V |
Input: | Standard |
NTC Thermistor: | No |
Operating Temperature: | -40°C ~ 125°C |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
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Transistors - IGBTs - Modules
FF150R12KT3GHOSA1 is an insulated-gate bipolar transistor (IGBT) module developed by TMT Corporation. It is a high-quality, high-performance and reliable product. The module has a VCE I rating up to 1200 volts, allowing it to be used as an ideal switch for power inverters and motor control applications.
Applications for the FF150R12KT3GHOSA1
The FF150R12KT3GHOSA1 module is widely used in automation, motor drive, and motor control applications. Since it is designed to handle high-voltage and high-current loads, it is suitable for use in high-voltage industrial applications such as AC drive, high-power motor control, UPS, and low-frequency switched-mode power supplies.
This module is also used in motor drive applications requiring high-accuracy current control, such as spindle drives, robot drives, and servomotors. It can also be used in a wide range of industrial applications such as welders, UPSs, power supplies, and solar inverters.
Working Principle of the FF150R12KT3GHOSA1
The FF150R12KT3GHOSA1 module employs a unique switching principle called insulated-gate bipolar transistors (IGBT)-based topologies. It is composed of a main control terminal (G), a main switching terminal (S), and an auxiliary terminal (A) that is connected between the G and S pins. The IGBTs are switches that control the amount of current flowing through the module between the main and auxiliary terminals. When the current flow is low, the module is turned on, thus allowing the desired load current to pass through the module.
The module also employs a high-performance field-effect transistor (FET)-based control circuitry. This circuitry enables the module to switch the current between the main and auxiliary terminals and thereby control the magnitude and direction of the current flowing through the module. The FET-based control circuitry also helps to reduce losses and maximize power conversion efficiency by allowing the module to operate at the most efficient switching frequency.
The FF150R12KT3GHOSA1 module has a built-in pulse-width modulation (PWM) controller, which allows the module to switch between multiple current states. This feature makes it ideal for use in applications requiring high-accuracy current control and fast switching speeds. The module also features advanced protection features such as soft-start, overcurrent protection, overvoltage protection, and short-circuit protection.
Conclusion
The FF150R12KT3GHOSA1 is an excellent IGBT module for high-voltage and high-current applications. It offers high reliability, high efficiency, and low switching speeds, making it ideal for use in applications such as motor drives and power inverters. The module offers advanced protection features that enable it to operate safely and efficiently in all conditions. Additionally, the built-in PWM controller allows for precise current control and fast switching speeds, making it the perfect choice for applications that require high accuracy and fast switching speeds.
The specific data is subject to PDF, and the above content is for reference
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