FF23MR12W1M1B11BOMA1 Allicdata Electronics
Allicdata Part #:

FF23MR12W1M1B11BOMA1-ND

Manufacturer Part#:

FF23MR12W1M1B11BOMA1

Price: $ 67.51
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET 2 N-CH 1200V 50A MODULE
More Detail: Mosfet Array 2 N-Channel (Dual) 1200V (1.2kV) 50A ...
DataSheet: FF23MR12W1M1B11BOMA1 datasheetFF23MR12W1M1B11BOMA1 Datasheet/PDF
Quantity: 1000
1 +: $ 61.36830
Stock 1000Can Ship Immediately
$ 67.51
Specifications
Series: CoolSiC™
Packaging: Tray 
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 50A
Rds On (Max) @ Id, Vgs: 23 mOhm @ 50A, 15V
Vgs(th) (Max) @ Id: 5.55V @ 20mA
Gate Charge (Qg) (Max) @ Vgs: 125nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds: 3950pF @ 800V
Power - Max: 20mW
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module
Description

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FET\'s, or Field Effect Transistors are used in a wide variety of applications and they come in many different shapes and sizes. The FF23MR12W1M1B11BOMA1 is a specialized device used in electronic applications that meet the requirements of a specific type of circuit.

Application Field

The FF23MR12W1M1B11BOMA1 is mainly used in high-gain and low-noise circuit designs that require precise tuning of device operating characteristics. This FET is typically used for amplifiers or power switches. The device is best suited for circuits where precise and stable characteristics are important, such as in communication systems, medical imaging, and industrial automation.

Working Principle

The FF23MR12W1M1B11BOMA1 is a field effect transistor that works on the principle of controlling current flow through a channel using an electric field, hence the name field effect transistor. The transistor\'s gate, the area that the applied electric field influences, controls the flow of current through the channel, thereby adjusting the overall properties of the transistor. This type of transistor is referred to as an enhancement-mode transistor because adding a voltage to the gate “enhances” or increases the current flow in the transistor. When no voltage is applied to the gate, there is no current flow through the channel.

Another important feature of the FF23MR12W1M1B11BOMA1, which is different than many other transistors, is the common-gate configuration. In this configuration, both the gate and the source are individually connected to the same point in the circuit, making it easier to tune the transistor\'s characteristics and reducing the need for additional components. This type of configuration also provides a low noise output, which is necessary for many applications.

The FF23MR12W1M1B11BOMA1 is a unique transistor that meets the requirements of many applications. Its small size, high performance, and relatively low power consumption make it an excellent choice for many electronic devices where precise tuning, low noise, and reliable performance are necessary.

The specific data is subject to PDF, and the above content is for reference

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