Allicdata Part #: | FF23MR12W1M1B11BOMA1-ND |
Manufacturer Part#: |
FF23MR12W1M1B11BOMA1 |
Price: | $ 67.51 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET 2 N-CH 1200V 50A MODULE |
More Detail: | Mosfet Array 2 N-Channel (Dual) 1200V (1.2kV) 50A ... |
DataSheet: | FF23MR12W1M1B11BOMA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | $ 61.36830 |
Series: | CoolSiC™ |
Packaging: | Tray |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 1200V (1.2kV) |
Current - Continuous Drain (Id) @ 25°C: | 50A |
Rds On (Max) @ Id, Vgs: | 23 mOhm @ 50A, 15V |
Vgs(th) (Max) @ Id: | 5.55V @ 20mA |
Gate Charge (Qg) (Max) @ Vgs: | 125nC @ 15V |
Input Capacitance (Ciss) (Max) @ Vds: | 3950pF @ 800V |
Power - Max: | 20mW |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
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FET\'s, or Field Effect Transistors are used in a wide variety of applications and they come in many different shapes and sizes. The FF23MR12W1M1B11BOMA1 is a specialized device used in electronic applications that meet the requirements of a specific type of circuit.
Application Field
The FF23MR12W1M1B11BOMA1 is mainly used in high-gain and low-noise circuit designs that require precise tuning of device operating characteristics. This FET is typically used for amplifiers or power switches. The device is best suited for circuits where precise and stable characteristics are important, such as in communication systems, medical imaging, and industrial automation.
Working Principle
The FF23MR12W1M1B11BOMA1 is a field effect transistor that works on the principle of controlling current flow through a channel using an electric field, hence the name field effect transistor. The transistor\'s gate, the area that the applied electric field influences, controls the flow of current through the channel, thereby adjusting the overall properties of the transistor. This type of transistor is referred to as an enhancement-mode transistor because adding a voltage to the gate “enhances” or increases the current flow in the transistor. When no voltage is applied to the gate, there is no current flow through the channel.
Another important feature of the FF23MR12W1M1B11BOMA1, which is different than many other transistors, is the common-gate configuration. In this configuration, both the gate and the source are individually connected to the same point in the circuit, making it easier to tune the transistor\'s characteristics and reducing the need for additional components. This type of configuration also provides a low noise output, which is necessary for many applications.
The FF23MR12W1M1B11BOMA1 is a unique transistor that meets the requirements of many applications. Its small size, high performance, and relatively low power consumption make it an excellent choice for many electronic devices where precise tuning, low noise, and reliable performance are necessary.
The specific data is subject to PDF, and the above content is for reference
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