Allicdata Part #: | FF900R12IE4PBOSA1-ND |
Manufacturer Part#: |
FF900R12IE4PBOSA1 |
Price: | $ 368.52 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MODULE IGBT PRIME2-1 |
More Detail: | IGBT Module Trench Field Stop Half Bridge 1200V 90... |
DataSheet: | FF900R12IE4PBOSA1 Datasheet/PDF |
Quantity: | 1000 |
3 +: | $ 335.01500 |
Series: | PrimePack™2 |
Part Status: | Active |
IGBT Type: | Trench Field Stop |
Configuration: | Half Bridge |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 900A |
Power - Max: | 20mW |
Vce(on) (Max) @ Vge, Ic: | 2.1V @ 15V, 900A |
Current - Collector Cutoff (Max): | 5mA |
Input Capacitance (Cies) @ Vce: | 54nF @ 25V |
Input: | Standard |
NTC Thermistor: | Yes |
Operating Temperature: | -40°C ~ 150°C |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
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Transistors - IGBTs - Modules:
FF900R12IE4PBOSA1 is a cutting-edge field-stop IGBT module which is used for a variety of high power applications including in motor drives, wind turbines, UPS systems, solar inverters and other energy storage applications. It offers state-of-the-art efficiency and reduced switching losses in comparison to traditional IGBTs.
At the heart of the FF900R12IE4PBOSA1 is a two-chip configuration comprised of an IGBT chip and a diode chip. This arrangement provides superior performance in terms of switching speed and forward voltage characteristics when compared to traditional IGBT modules. Additionally, the FF900R12IE4PBOSA1 is optimized for high frequency operation, making it ideal for high power and high efficiency applications.
The FF900R12IE4PBOSA1 is a field-stop IGBT module which is used to regulate the DC path of power applications. It is a three-terminal device which features a gate, collector and emitter connection. The gate terminal is used to control the flow of current between the collector and emitter, allowing for efficient and accurate switching. The collector is used to feed current to downstream components, while the emitter is used to draw current away from the module.
The FF900R12IE4PBOSA1 utilizes sophisticated technologies such as active control, active current control, regenerative switching and pre-distortion control to achieve outstanding performance. These technologies help reduce current and voltage stresses on the switch, resulting in greater efficiency and improved device reliability. Additionally, the FF900R12IE4PBOSA1 is protected with a Plasti-Coated (PCB) resistor system to mitigate over-current, short circuit and thermal stress to ensure reliable operation.
The FF900R12IE4PBOSA1 is a powerful IGBT module that is ideal for a variety of high power applications. Its state-of-the-art switching and power management technologies help to ensure optimized efficiency and increased reliability, making it an ideal choice for the most demanding power applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
FF900R12IE4BOSA1 | Infineon Tec... | 355.31 $ | 1000 | IGBT MODULE 1200V 900AIGB... |
FF900R12IP4BOSA2 | Infineon Tec... | 355.31 $ | 7 | IGBT MODULE 1200V 900AIGB... |
FF900R12IP4PBOSA1 | Infineon Tec... | 357.1 $ | 1000 | IGBT MODULE VCES 1200V 90... |
FF900R12IE4PBOSA1 | Infineon Tec... | 368.52 $ | 1000 | MODULE IGBT PRIME2-1IGBT ... |
FF900R12IE4VBOSA1 | Infineon Tec... | 380.08 $ | 1000 | IGBT MODULE VCES 1200V 90... |
FF900R12IP4VBOSA1 | Infineon Tec... | 390.32 $ | 1000 | IGBT MODULE VCES 1200V 90... |
FF900R12IP4DBOSA2 | Infineon Tec... | 395.55 $ | 1000 | IGBT MODULE VCES 1200V 90... |
FF900R12IE4VPBOSA1 | Infineon Tec... | 417.73 $ | 1000 | MODULE IGBT PRIME2-1IGBT ... |
FF900R12IP4DVBOSA1 | Infineon Tec... | 431.4 $ | 1000 | IGBT MODULE VCES 1200V 90... |
FF90FF | Belden Inc. | 4.0 $ | 1000 | RIGHT ANGLE F61 CONNECTOR |
FF90FM | Belden Inc. | 5.06 $ | 1000 | RIGHT ANGLE F CONNECTOR |
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