FF900R12IE4VPBOSA1 Allicdata Electronics
Allicdata Part #:

FF900R12IE4VPBOSA1-ND

Manufacturer Part#:

FF900R12IE4VPBOSA1

Price: $ 417.73
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MODULE IGBT PRIME2-1
More Detail: IGBT Module Trench Field Stop Half Bridge 1200V 90...
DataSheet: FF900R12IE4VPBOSA1 datasheetFF900R12IE4VPBOSA1 Datasheet/PDF
Quantity: 1000
3 +: $ 379.75400
Stock 1000Can Ship Immediately
$ 417.73
Specifications
Series: PrimePack™2
Part Status: Active
IGBT Type: Trench Field Stop
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 900A
Power - Max: 20mW
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 900A
Current - Collector Cutoff (Max): 5mA
Input Capacitance (Cies) @ Vce: 54nF @ 25V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

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FF900R12IE4VPBOSA1 Application Field and Working Principle

FF900R12IE4VPBOSA1 are designed for use in motor drive applications in the inverter field, specifically packaged in a module form by the manufacturer. The general application of FF900R12IE4VPBOSA1 is for demanding industrial applications, including any situation where efficient, reliable and robust power control is required. FF900R12IE4VPBOSA1 are also well-suited for applications such as AC motor drives, servo drives, uninterruptable power supplies (UPS), industrial welding and other applications that require advanced control systems.

FF900R12IE4VPBOSA1 are high power IGBT modules with a maximum collector-emitter voltage of 1200V and a rated current of 900A. These modules are designed to be efficient and reliable, able to carry extremely large currents while generating very little heat. The power dissipation of these modules is very low, resulting in high power density and excellent system efficiency.

FF900R12IE4VPBOSA1 modules use an Insulated-Gate Bipolar Transistor (IGBT) as its main component. An IGBT is a three-terminal power semiconductor device, where one terminal is the emitter, one is the collector, and the other is the gate. The IGBT operates by providing electricity to the gate, which creates an electric field between the gate and the collector. This electric field allows current to flow from the collector to the emitter, thereby enabling the IGBT to operate as an amplifier or switch.

In FF900R12IE4VPBOSA1 modules, the IGBT is mounted onto an insulated copper base plate with an aluminum heat sink. The copper base plate serves both as a heat spreader and a terminal block. The IGBTs are connected in series with each other and in parallel with the heat sink, allowing them to act as one unit and draw large amounts of current. When the IGBTs are turned off, the heat can dissipate quickly and contribute to the module’s overall efficiency. Additionally, all IGBTs in the module have their own separate driver circuits, making them simple to control and maintain.

Overall, FF900R12IE4VPBOSA1 modules are highly efficient, reliable and robust pieces of equipment that are well-suited for a variety of demanding industrial applications. Whether you’re using them in an AC motor drive, welding equipment, or a UPS system, you can be sure that FF900R12IE4VPBOSA1 modules will provide reliable and efficient power control.

The specific data is subject to PDF, and the above content is for reference

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