FF900R12IP4DBOSA2 Allicdata Electronics
Allicdata Part #:

FF900R12IP4DBOSA2-ND

Manufacturer Part#:

FF900R12IP4DBOSA2

Price: $ 395.55
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT MODULE VCES 1200V 900A
More Detail: IGBT Module Trench Field Stop 2 Independent 1200V ...
DataSheet: FF900R12IP4DBOSA2 datasheetFF900R12IP4DBOSA2 Datasheet/PDF
Quantity: 1000
3 +: $ 359.59100
Stock 1000Can Ship Immediately
$ 395.55
Specifications
Series: PrimePack™2
Part Status: Active
IGBT Type: Trench Field Stop
Configuration: 2 Independent
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 900A
Power - Max: 5100W
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 900A
Current - Collector Cutoff (Max): 5mA
Input Capacitance (Cies) @ Vce: 54nF @ 25V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module
Description

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FF900R12IP4DBOSA2 is a type of IGBT Modules, that is related to transistor. The FF900R12IP4DBOSA2 module products are used in various application or field. This article will focus on the FF900R12IP4DBOSA2 application field and its working principle.

FF900R12IP4DBOSA2 Application Fields

FF900R12IP4DBOSA2 is suitable for use in motor drive applications, such as motor drives, electric vehicles, UPS, and industrial motor control systems. It can also be used in UPS systems and adjustable speed drives.

FF900R12IP4DBOSA2 Working Principle

FF900R12IP4DBOSA2 works on the principle of Insulated Gate Bipolar Transistor (IGBT). It is a three-terminal device that combines the advantages of both bipolar junction transistors and field-effect transistors into one device. It has an insulated gate on one of its terminals, that is controlled by a voltage. This gate can open or close allowing current to either flow or stop flowing through the device. When the gate is open, current flows from the collector to the emitter and the device works in a conducting or "on" state. When the gate is closed, no current will flow and the device works in non-conducting or "off" state. The voltage on the gate determines how much current flows between collector and emitter, so the device can be used to control the level of power supplied to a load.

Conclusion

FF900R12IP4DBOSA2 has many application fields like motor drives, electric vehicles, UPS and industrial motor control systems, where it acts as an efficient power controlling switch. This IGBT module works on the principle of Insulated Gate Bipolar Transistor (IGBT) and it has an insulated gate which is controlled by a voltage. This allows current to either flow or stop flowing between collector and emitter, thus allowing the module to control the level of power supplied to a load.

The specific data is subject to PDF, and the above content is for reference

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