FFSH10120A Allicdata Electronics
Allicdata Part #:

FFSH10120A-ND

Manufacturer Part#:

FFSH10120A

Price: $ 3.64
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: 1200V 10A SIC SBD
More Detail: Diode Silicon Carbide Schottky 1200V 17A (DC) Thro...
DataSheet: FFSH10120A datasheetFFSH10120A Datasheet/PDF
Quantity: 1000
450 +: $ 3.27442
Stock 1000Can Ship Immediately
$ 3.64
Specifications
Series: --
Part Status: Active
Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 17A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.75V @ 10A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 200µA @ 1200V
Capacitance @ Vr, F: 612pF @ 1V, 100kHz
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Description

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The FFSH10120A is a Silicon Carbide, Schottky diode which can be used as a rectifier in a variety of applications. This article will outline the various applications and provide an overview of the working principle.

Applications

One of the most common applications for the FFSH10120A is as a rectifier in power electronics applications. The Schottky diode has a low voltage drop and is able to handle high currents, making it ideal for use as a rectifier in applications such as AC/DC converters and power supplies. In addition, the FFSH10120A can be used to provide protection against voltage spikes or to prevent over-current, making it suitable for use in a variety of electronics applications.

The FFSH10120A can also be used as a rectifier in microwave and RF applications. The diode is highly sensitive and can be used to detect small signals and can be used as a detector or mixer stage. In addition, due to its low forward voltage drop and high frequency response, the FFSH10120A is also suitable for use as a high speed switching device in switch mode power supplies.

Working Principle

The FFSH10120A is a Schottky diode which is formed from a semiconductor junction between two regions of semiconductor material doped with different impurities. When a voltage is applied across the diode, the voltage is used to create a potential barrier which prevents current from flowing in the reverse direction. In the forward direction, a small amount of current can be allowed to flow without significant voltage drop. This is due to the lower energy gap between the two regions which is the result of the layer of metal which is deposited at the junction.

The FFSH10120A can handle a maximum current of 20A and has a forward voltage drop of around 0.3V. This low voltage drop is what makes it an efficient rectifier and means that it is able to handle high currents without significant loss. In addition, the diode has a high frequency response and a low reverse current leakage, making it suitable for use in high speed applications.

In summary, the FFSH10120A can be used as a rectifier in a variety of applications, from power electronics to microwave and RF applications. It has a low forward voltage drop and a high frequency response which makes it highly efficient. The FFSH10120A is a reliable and cost-effective solution for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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