Allicdata Part #: | FFSH30120AOS-ND |
Manufacturer Part#: |
FFSH30120A |
Price: | $ 12.85 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | 1200V 30A SIC SBD |
More Detail: | Diode Silicon Carbide Schottky 1200V 46A (DC) Thro... |
DataSheet: | FFSH30120A Datasheet/PDF |
Quantity: | 450 |
1 +: | $ 11.68020 |
10 +: | $ 10.61990 |
Series: | -- |
Part Status: | Active |
Diode Type: | Silicon Carbide Schottky |
Voltage - DC Reverse (Vr) (Max): | 1200V |
Current - Average Rectified (Io): | 46A (DC) |
Speed: | No Recovery Time > 500mA (Io) |
Reverse Recovery Time (trr): | 0ns |
Current - Reverse Leakage @ Vr: | 200µA @ 1200V |
Capacitance @ Vr, F: | 1740pF @ 1V, 100kHz |
Mounting Type: | Through Hole |
Package / Case: | TO-247-2 |
Supplier Device Package: | TO-247-2 |
Operating Temperature - Junction: | -55°C ~ 175°C |
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Diodes - Rectifiers - Single
The FFSH30120A is a single-phase, fast-recovery, plastic-encapsulated rectifier diode. A rectifier diode is a type of semiconductor device with a nonlinear current-voltage (I-V) characteristic that is used for rectification, which is the process of converting alternating current (AC) to direct current (DC). Specifically, the FFSH30120A is designed for use in high-current, high-efficiency rectification applications used at the input stages of switch-mode power supplies.
The FFSH30120A features a current rating of 30 Amperes, and a forward voltage drop of 1.2 Volts, with a low thermal resistance junction-to-case of 2.0 ºC/W. It also offers a fast recovery time of 66ns maximum, and an operating temperature range of -55ºC to 125ºC. The device is also available in surface mount and through-hole packages, allowing for flexible designs.
To understand the working principle ofrectifier diodes, it is necessary to understand the behavior of semiconductor devices in relation to voltage and current. In a PN junction, where a semiconductor is connected to a voltage source, electrons from the N-type semiconductor diffuse across to the P-type semiconductor, forming a depletion region in which the electrons are locked to form an electric field. This region acts as an insulating barrier which blocks the flow of current. When a positive voltage is applied to the junction, the electric field reverses, allowing the electrons to once again flow across the junction. This flow of current is known as the forward bias.
On the other hand, when a negative voltage is applied to the junction, the field acts to pull the electrons away, preventing the passage of current. This is known as the reverse bias.The FFSH30120A is designed such that it is optimized for conduction in the forward bias condition, allowing current to flow through the diode, while preventing current in the reverse direction. This allows the diode to act as a rectifier, converting AC current to DC current.
Another advantage of the FFSH30120A is its high-efficiency rating and fast recovery time. The high-efficiency rating of the device greatly reduces the power losses in the circuit, enabling the power supply to offer high operating efficiencies over a wide range of input voltages. The fast recovery time also helps to reduce the amount of EMI generated by the power supply, providing an improved operating environment and greater system reliability.
In conclusion, the FFSH30120A is a single-phase, fast-recovery plastic-encapsulated rectifier diode designed for high-current, high-efficiency rectification applications used in the input stages of switch-mode power supplies. With its high-efficiency ratings, low forward voltage drop and fast recovery time, the device is designed to offer improved power and performance.
The specific data is subject to PDF, and the above content is for reference
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