FFSP2065A

Series:	--
Part Status:	Active
Diode Type:	Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):	650V
Current - Average Rectified (Io):	25A (DC)
Voltage - Forward (Vf) (Max) @ If:	1.75V @ 20A
Speed:	No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):	0ns
Current - Reverse Leakage @ Vr:	200µA @ 650V
Capacitance @ Vr, F:	1085pF @ 1V, 100kHz
Mounting Type:	Through Hole
Package / Case:	TO-220-2
Supplier Device Package:	TO-220-2
Operating Temperature - Junction:	-55°C ~ 175°C

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FFSP2065A Application Field and Working Principle

FFSP2065A, a rectifying field effect transistor (FET) device, is widely used in various sectors, primarily in consumer electronics and automotive applications. It incorporates a Silicon-Germanium (SiGe) substrate, which provides superior performance in terms of high-temperature operation with low drain-source on-state voltage. It is mainly used for high-frequency switching, current sensing and in low power supply applications. The FFSP2065A features high voltage operation with low-leakage current, and efficient thermal performance. It offers the addition of P-channel MOSFETs to reduce the cost of driving an external transistor when switching circuits. The device also features an ultra-low voltage threshold of 0.3V. In terms of application field, the FFSP2065A is suitable for applications that require low loss power transfers, as well as high-frequency switching, gate drive, and low power supply. It is also ideal for applications having low gate drive requirement, such as power amplifiers, switching regulators, RF amplifiers and other various consumer applications.In terms of working principle, the FFSP2065A is a three-terminal device that consists of a body diode and a reverse-biased junction connected in parallel, which are referred to as the drain and the source terminals. The device functions as a switch when an applied electric field creates a negative potential between the source and the gate terminals, allowing for current conduction between the source and the drain terminals. Depending on the voltage levels, the switch can either be on or off. When on, the drain current increases exponentially as the gate voltage increases. The FFSP2065A is also subjected to leakage current. The leakage current mainly occurs due to the presence of minority charge carriers. This current increases exponentially with temperature, thus the device should be utilized at temperatures below the maximum rated temperature to avoid leakage current that can potentially result in malfunction or damage of the device. Overall, the FFSP2065A is a widely-used, high-frequency transistor that features low off-state leakage, low-threshold voltage, high-temperature tolerance, and efficient thermal characteristics. It is suitable for use in various electronic applications, primarily due to its characteristics, including low-loss power transfer, high-frequency switching, gate-drive, and low-power supply, making it an ideal choice for various consumer and industrial applications.

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