FFSPF1065A

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

As a component of the diodes - rectifiers - single family, the FFSPF1065A plays an increasingly important role in the electrical industry. In this article, the application field and working principle of the FFSPF1065A will be discussed.

Salt-water-resistant reverse-bonded Schottky diode, FFSPF1065A, belongs to the FFSPF series. The device is characterized by its ultra-low forward voltage, low reverse current leakage, fast turn-on time, low reverse recovery time, and low on-state resistance.

The FFSPF1065A has a wide range of applications. It may be used for coreless transistors, application-specific integrated circuits, driver ICs, and RF power transistors as well as other high-power rectification circuits. Additionally, it can act as a flyback diode and is suitable for electronic ballasts, LED lighting, CD/DVD laser diode, and LCD backlight lamps.

Furthermore, its Schottky barrier is designed to prevent the device from short-circuiting of high-speed switching switching conditions, reducing power losses and allowing higher current spike capability.

In terms of working principle, the device features a sort of diode, mainly a Schottky diode. This P-type semiconductor is different from the other semiconductor devices in the FFSPF series, in that its Schottky barrier prevents carriers from either entering or leaving the junction. As a result, electrons can only cross the junction when a sufficient electric field is applied.

When current flows through the FFSPF1065A, it will be resisted by the N-type material, as this material has a high concentration of holes. As a result, the voltage drop across the FFSPF1065A will be limited and the current will be constrained. The FFSPF1065A also has a reverse polarity protection, which will limit the current when the voltage across the device is reversed.

In addition to its Schottky barrier, the device also has parasitic capacitances. These capacitances act as a parallel feature and decrease the impedance of the circuit, allowing the voltage across the FFSPF1065A to increase when the current decreases. The device also features an avalanche breakdown, which ensures that the current flow remains constant and will remain constant with increased voltage.

Lastly, the device is capable of withstanding high-frequency power loads, and its excellent ESD immunity ensures its long-term operability. It is also qualified to IEC 60747-1, IEC/EN/UL 60747-2, and it is also RoHS compliant.

In conclusion, the FFSPF1065A is an excellent device for various applications. It features a Schottky barrier, parasitic capacitance, reverse polarity protection, avalanche breakdown, and excellent ESD immunity, making it a great choice for various applications. It is also widely used in coreless transistors, application-specific integrated circuits, driver ICs, and RF power transistors.

The specific data is subject to PDF, and the above content is for reference