FGA15N120ANDTU Discrete Semiconductor Products

Power - Max:	200W
Supplier Device Package:	TO-3PN
Package / Case:	TO-3P-3, SC-65-3
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Reverse Recovery Time (trr):	330ns
Test Condition:	600V, 15A, 20 Ohm, 15V
Td (on/off) @ 25°C:	90ns/310ns
Gate Charge:	120nC
Input Type:	Standard
Switching Energy:	3.27mJ (on), 600µJ (off)
Series:	--
Vce(on) (Max) @ Vge, Ic:	3.2V @ 15V, 15A
Current - Collector Pulsed (Icm):	45A
Current - Collector (Ic) (Max):	24A
Voltage - Collector Emitter Breakdown (Max):	1200V
IGBT Type:	NPT
Moisture Sensitivity Level (MSL):	--
Part Status:	Obsolete
Lead Free Status / RoHS Status:	--
Packaging:	Tube

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Introduction to FGA15N120ANDTU

The FGA15N120ANDTU is an insulated gate bipolar transistor (IGBT) that is well suited for use in many applications. This component is part of the Series 15N devices which offer improved performance, higher surge capabilities and better on-state characteristics compared to other series devices. The FGA15N120ANDTU is a single IGBT, meaning it contains one emitter and one collector.

Application Field and Performance of FGA15N120ANDTU

The FGA15N120ANDTU is suitable for use in applications with high current and power requirements. It is particularly suitable for hard switching applications with high surge currents, as well as applications requiring fast switching, high efficiency and low switching losses. The FGA15N120ANDTU is a high performance transistor that can operate up to a voltage of 1500V and up to a current of 120A. It has a fast switching speed of 200ns, a robust gate drive system and a good power density with a 9.5kW/L ratio. It is also highly reliable and can operate over a wide range of temperatures, from -45°C to 125°C.

Working Principle of FGA15N120ANDTU

The FGA15N120ANDTU is an IGBT device which is used in applications requiring high voltage, high current and fast switching. This component works on the principle of combining a BJT and a JFET and using both devices to controllably switch current. When the IGBT is turned on, the voltage at the gate is increased and the JFET turns on. This forces the collector of the BJT to be cut off from the ground, which allows current to flow from collector to emitter. When this happens, the voltage at the collector is forced to nearly zero, which in turn activates the transistor and allows current to flow from the emitter to the collector. When the IGBT device is turned off, the voltage at the gate is decreased and the JFET turns off. This forces the collector of the BJT to be connected to the ground, which prevents current from flowing from collector to emitter. This decreases the voltage at the collector and prevents current from flowing from emitter to collector, thus turning off the transistor.

Advantages of FGA15N120ANDTU

The FGA15N120ANDTU provides several important benefits that make it highly suitable for many applications. It is capable of handling high current and is able to switch quickly while also providing higher surge capabilities and better on-state characteristics compared to other series devices. It also has a good power density and is highly reliable, with a wide operating temperature range and robust gate drive system.

Conclusion

The FGA15N120ANDTU is a single IGBT transistor that is well suited for use in power control and hard switching applications with high current and surge requirements. This component provides improved performance, fast switching speed, high efficiency, good power density and excellent reliability. It also has a robust gate drive system and is capable of operating over a wide range of temperatures.

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